Overview

This volume constitutes the proceedings of the tenth meeting of the International school on Condensed Matter Physics. Since 1980, this community of condensed matter scientists has gathered in Varna, Bulgaria, every two years, to review and discuss the development of various investigations in the field, to present the latest results, and to outline the most important trends in condensed matter science.The book reflects the development of the field, and points to the growing interest in the application of theoretical achievements and to the mutual inspirations of science and technology.

Full Product Details

Author:   J M Marshall (Univ Of Wales Swansea, Uk) ,  Nikolav Kirov (Bulgarian Academy Of Sciences, Bulgaria) ,  Alexander Vavrek (Bulgarian Academy Of Sciences, Bulgaria) ,  J M Maud (Univ Of Wales Swansea, Uk)
Publisher:   World Scientific Publishing Co Pte Ltd
Imprint:   World Scientific Publishing Co Pte Ltd
Dimensions:   Width: 16.30cm , Height: 3.60cm , Length: 23.00cm
Weight:   0.925kg
ISBN:  

9789810239046

ISBN 10:   9810239041
Pages:   580
Publication Date:   04 June 1999
Audience:   College/higher education ,  Professional and scholarly ,  Postgraduate, Research & Scholarly ,  Professional & Vocational
Format:   Hardback
Publisher's Status:   Active
Availability:   Out of stock  
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Table of Contents

Electronic properties of hot-wire and PECVD-deposited nanocrystalline silicon; X-ray photoconductors for digital flat panel X-ray image detectors; the influence of long-ranged random potentials on the electronic transport in disordered semiconductors; temperature-dependent exciton luminescence in quantum wells with disorder; organic thin film transistors; nanometer-scale mechanism of reversible photo-structural changes in amorphous chalcogenides; thin Ta2O5 layers as an alternative to SiO2 for submicron applications; photo- and dark conductivity of microcrystalline mc-Si:H thin films; evaluation of techniques for the interpretation of pulsed transient photoconductivity in disordered semiconductors; decay from steady state photoconductivity in amporphous semiconductors; properties of thin SiO2 layers containing Fe and Ni; novel phenomena in organized organic monolayers; investigation of the influence of some technological parameters upon the optical and electrical properties of a-Si 1-xGex:H PECVD thin films; electrical conductivity of electrode growth surfaces possessing fullerine structures; effect of the width of an enlarged quantum well in A1As/GaAs superlattice on the electronic structure; optical inhomogeneity of RF-sputtered BaTiO3 thin films; a breakdown model for very thin insulating films on silicon; picosecond ultrasonic waves in Cu-o multilayers. (Part contents)

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