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OverviewThis book presents the fundamentals of the thermoelectrical effect in silicon carbide (SiC), including the thermoresistive, thermoelectric, thermocapacitive and thermoelectronic effects. It summarizes the growth of SiC, its properties and fabrication processes for SiC devices and introduces the thermoelectrical sensing theories in different SiC morphologies and polytypes. Further, it reviews the recent advances in the characterization of the thermoelectrical effect in SiC at high temperatures. Discussing several desirable features of thermoelectrical SiC sensors and recent developments in these sensors, the book provides useful guidance on developing high sensitivity and linearity, fast-response SiC sensing devices based on thermoelectrical effects. Full Product DetailsAuthor: Toan Dinh , Nam-Trung Nguyen , Dzung Viet DaoPublisher: Springer Verlag, Singapore Imprint: Springer Verlag, Singapore Edition: 1st ed. 2018 Weight: 0.454kg ISBN: 9789811325700ISBN 10: 9811325707 Pages: 115 Publication Date: 23 October 2018 Audience: Professional and scholarly , Professional & Vocational Format: Paperback Publisher's Status: Active Availability: Manufactured on demand  We will order this item for you from a manufactured on demand supplier. Table of ContentsIntroduction to SiC and Thermoelectrical Properties.- Fundamentals of Thermoelectrical Effect in SiC.- Desirable Features for High Temperature SiC Sensors.- Fabrication of SiC MEMS Sensors.- Impact of Design and Process on Performance of SiC Thermal Devices.- Applications of Thermoelectrical Effect in SiC.- Future prospects of SiC Thermoelectrical Sensing Devices.ReviewsAuthor InformationTab Content 6Author Website:Countries AvailableAll regions |
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