Overview

A new science emerges at the intersection of modern physics, computer s- ence,andmaterialscience. Thestruggletofurtherminiaturizeisputtingna- technology to the verge of creating single-electron and/or single-spin devices that operate by moving a single electron (spin) and can serve as transistors, memory cells, and for logic gates. These devices take advantage of quantum physics that dominates nanometer size scales. The devices that utilize met- based hybrid nanostructures may possess signi?cant advantages over those exploiting purely semiconducting materials. First, the chemistry of metals is typically simpler than that of semiconductors. Second, the electric properties of metals are much less sensitive to the structural defects and impurities than those of semiconductors. Next, metallic devices allow better electric and th- mal contacts. Another important plus point is that in metals the electron de Broigle wavelength is smaller by many orders of magnitude as compared to that in semiconductors. This makes metallic devices more promising with respect to their size - down to the size of an atom. Further, high bulk and interface thermal conductance in metallic devices are bene?cial for the heat withdraw. And, last but by no means the least, the high electron velocity in metals promises to accelerate enormously operation rates with respect to those in semiconductor-based devices. The ?nal note is that metals can - hibit strong ferromagnetism and/or superconductivity.

Full Product Details

Author:   Andreas Glatz ,  Veniamin I. Kozub ,  Valerii M. Vinokur
Publisher:   Springer-Verlag New York Inc.
Imprint:   Springer-Verlag New York Inc.
Edition:   2006 ed.
Volume:   230
Dimensions:   Width: 15.60cm , Height: 1.80cm , Length: 23.40cm
Weight:   1.060kg
ISBN:  

9781402047787

ISBN 10:   1402047789
Pages:   307
Publication Date:   12 August 2006
Audience:   Professional and scholarly ,  Professional & Vocational
Format:   Paperback
Publisher's Status:   Active
Availability:   In Print  
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Table of Contents

Coherence and Correlation Effects.- Phase Measurements in Closed Aharonov-Bohm Interferometers.- Berry Phase with Environment: Classical versus Quantum.- Quantum Mesoscopic Phenomena.- Electron Transport in Granular Metals.- Studies of Current-Driven Excitations in Co/Cu/Co Trilayer Nanopillars.- Nanomechanical Effects in Suspended Carbon Nanotubes.- Transport through Ferromagnet/Superconductor Interfaces.- Anomalous Negative Magnetoresistance Caused by Non-Markovian Effects.- Persistent Currents in Interacting Aharonov-Bohm Interferometers.- Experimental Implementations of the Superconductor-Insulator Transition.- Thermal Fluctuations in One-Dimensional Disordered Quantum Systems.- Coulomb Drag between Quantum Wires: Effect of Small Momentum Transfer.- Signatures of Spin-Charge Separation in Double-Quantum Wire Tunneling.- Transport of Interacting Electrons through a Double Barrier.- Ratchet Effects in Luttinger Liquids.- Superconductivity in Nanostructures.- Ferromagnetic-Superconducting Hybrid Systems.- STM Spectroscopy of the Local Density of States in Normal Metal - Superconductor Systems.- Quantum Tunneling between Paramagnetic and Superconducting States of a Nanometer-Scale Superconducting Grain Placed in a Magnetic Field.- Domain Wall Superconductivity in Ferromagnetic Superconductors and Hybrid S/F Structures.- Rasba Spin-Orbit Interaction in a Ballistic Josephson Junction.- Manifestation of Triplet Superconductivity in Superconductor-Ferromagnet Structures.- Noise and Fluctuation Phenomena.- Phase Dependent Current Statistics in a Short-Arm Andreev Interferometer.- Semiclassical Theory of Higher Cumulants of Noise.- Josephson Junctions as Threshold Detectors for Full Counting Statistics.- Energy Dependence of Current Noise in Superconducting/Normal Metal Junctions.- Measurement of the Third Moment of Voltage Fluctuations in a Tunnel Junction.- Shot Noise in Mesoscopic Transport Through Localised States.- Single Electron Physics.- Single Particle Transport in Disordered Andreev Wires.- Two-Channel Kondo Effect in a Modified Single Electron Transistor.- Spin-Dependent Transport of Electrons in a Shuttle Structure.

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