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Author:   Manijeh Razeghi
Publisher:   Taylor & Francis Ltd
Imprint:   Institute of Physics Publishing
Dimensions:   Width: 15.60cm , Height: 2.50cm , Length: 23.40cm
Weight:   0.907kg
ISBN:  

9780750303095

ISBN 10:   0750303093
Pages:   444
Publication Date:   01 January 1995
Audience:   College/higher education ,  Professional and scholarly ,  Postgraduate, Research & Scholarly ,  Professional & Vocational
Replaced By:   9781439807309
Format:   Hardback
Publisher's Status:   Active
Availability:   In Print  
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Table of Contents

Preface. Foreword. Introduction. Introduction to semiconductor compounds. MOCVD growth technique. ^IIn-situ characterization during MOCVD. ^IEx-situ characterization techniques. MOCVD growth of GaAs layers. Growth and characterization of the GaInP-GaAs system. Optical devices. GaAs-based lasers. GaAs-based heterojunction electron devices grown by MOCVD. Optoelectronic integrated circuits (OEICs). Appendices. Effect of substrate miscut on the measured superlattice period. Optimization of thickness and In composition of InGaAs well for 980 nm lasers. Energy levels and laser gains in a quantum well (GaInAsP): the 'effective mass approximation'. Luttinger-Kohn Hamiltonian. Infrared detectors. Index.

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