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Author:   Y. R. Nosov
Publisher:   Springer Science+Business Media
Imprint:   Kluwer Academic/Plenum Publishers
Edition:   1969 ed.
Volume:   4
ISBN:  

9780306304095

ISBN 10:   0306304090
Pages:   249
Publication Date:   31 December 1995
Audience:   Professional and scholarly ,  Professional & Vocational
Format:   Hardback
Publisher's Status:   Out of Stock Indefinitely
Availability:   Out of stock  

Table of Contents

I. Basic Electronics of the Switching Processes in Semiconductor p-n Junctions.- 1. Introduction.- 2. Transformation of Basic Equations.- 3. Solution of the Diffusion Equation (at Low Injection Levels).- II. Switching in a Planar Diode.- 4. Transient Processes without a Limiting Resistance in the Diode Circuit.- 5. Switching of a Diode Circuit with a Limiting Resistance.- 6. Switching of a Diode Circuit with an Infinite Resistance.- 7. Small-Signal Transient Characteristics of a Diode.- 8. Methods for the Observation of Transient Processes in Diodes.- 9. Main Experimental Results.- III. Planar Diode with a Thin Base.- 10. Steady-State Distribution of Holes in the Base.- 11. Switching without a Resistance in the Diode Circuit.- 12. Switching in a Circuit with a Limiting Resistance.- 13. General Estimate of the Response of a Thin-Base Diode.- IV. Transient Processes in a Diode with a Small-Area Rectifying Contact.- 14. Ideal Model of a Point-Contact Diode.- 15. Transient Conditions.- 16. Experimental Investigations.- V. Effect of an Electric Field in a Diode Base on Transient Processes.- 17. Built-in Internal Field in a Diode Base.- 18. Forward-Biased Diode with a Built-in Field.- 19. First (Recovery) Phase.- 20. Reverse Current Decay.- VI. Transient Processes in Diodes During the Passage of a Forward Current Pulse.- 21. Introduction.- 22. Establishment of a Forward Resistance in a Planar Diode.- 23. Establishment of a Forward Voltage Across a Diode with a Hemispherical p-n Junction.- VII. Transient Processes in Semiconductor Diodes and Fundamentals of Recombination Theory.- 24. Introduction.- 25. Lifetime of Holes under Various Recombination Conditions.- 26. Influence of Trapping Levels on Transient Processes in Diodes.- 27. Recombination Properties of Gold-Doped Germanium and Silicon.- Literature Cited.

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