Surface Defects in Wide-Bandgap LiF, SiO2, and ZnO Crystals: Experiments and Simulations

Author:   Utkirjon Sharopov
Publisher:   Springer International Publishing AG
ISBN:  

9783031588495


Pages:   115
Publication Date:   29 May 2024
Format:   Paperback
Availability:   In Print   Availability explained
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Surface Defects in Wide-Bandgap LiF, SiO2, and ZnO Crystals: Experiments and Simulations


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Overview

This book deals with surface defects in wide-bandgap crystals of lithium fluoride, silicon dioxide, and zinc oxide. Encompassing topics such as radiation-induced amorphization, crystallization, and various microstructural developments arising from defect production and annealing, the book delves into controlled modifications of physical and chemical properties, micro and nano-structuring of surfaces, and the creation and behavior of structures far from thermal equilibrium, including supersaturated solid solutions, ion tracks, and surfaces treated with electron- and high-intensity ion beams. Beyond its relevance to the academic community, this monograph serves as a valuable resource for design and installation organizations, offering insights for specialists involved in the development of modern, new, and energy-efficient innovative materials. The applicability extends to traditional silicon energy and semiconductor electronics, providing practical knowledge for professionals engaged in these fields. Additionally, the work is of significance to a broad spectrum of specialists and managers in various organizations involved in the development of lithium-ion batteries for energy storage systems, especially those employing cutting-edge high-performance materials. As a comprehensive reference in materials science, this monograph caters to a diverse audience engaged in the ongoing advancements and applications within this dynamic field. It is suitable for scientific and engineering professionals, as well as researchers specializing in materials science, physics, semiconductors, photovoltaics, defects engineering, laser technology, solid-state physics, and beam-enhanced synthesis and modification of materials.

Full Product Details

Author:   Utkirjon Sharopov
Publisher:   Springer International Publishing AG
Imprint:   Springer International Publishing AG
ISBN:  

9783031588495


ISBN 10:   3031588495
Pages:   115
Publication Date:   29 May 2024
Audience:   Professional and scholarly ,  Professional & Vocational
Format:   Paperback
Publisher's Status:   Active
Availability:   In Print   Availability explained
This item will be ordered in for you from one of our suppliers. Upon receipt, we will promptly dispatch it out to you. For in store availability, please contact us.

Table of Contents

Review of Experimental and Theoretical Works on Defect Formation in Wide-gap Crystals.- Measurement Technique and Experimental Facility.- Formation of Defects and Clusters on the Surface of LiF Crystals Under Electron and Ion Irradiation.- Formation of Defects and Clusters on the Surface of Crystals Si(111) and SiOx at Irradiation by Electrons and Ions.- Formation of Defects and Clusters on the Surface of ZnO Crystals Under Electron Irradiation.

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Author Information

Utkir B. Sharopov, DSc, is a distinguished researcher and Professor at the Solar Thermal and Energetic Applications Laboratory, Uzbekistan Academy of Sciences. With over two decades of experience, he specializes in thermoelectric materials, computational material science, and nanostructures. Starting as a Junior Research Fellow in 2003, his journey led him to explore surface defects in wide-bandgap crystals, including lithium fluoride and zinc oxide. His work encompasses radiation-induced amorphization, crystallization, and the controlled modification of material properties. Noteworthy projects include hydrogen production using solar energy and the development of solar-powered technologies. He is the recipient of various grants, with contributions extending to energy-efficient materials, semiconductor electronics, and lithium-ion batteries. His educational background includes a DSc in Physical Electronics.

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