Subsecond Annealing of Advanced Materials: Annealing by Lasers, Flash Lamps and Swift Heavy Ions

Author:   Wolfgang Skorupa ,  Heidemarie Schmidt
Publisher:   Springer International Publishing AG
Edition:   Softcover reprint of the original 1st ed. 2014
Volume:   192
ISBN:  

9783319352879


Pages:   321
Publication Date:   23 August 2016
Format:   Paperback
Availability:   Manufactured on demand   Availability explained
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Subsecond Annealing of Advanced Materials: Annealing by Lasers, Flash Lamps and Swift Heavy Ions


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Overview

The thermal processing of materials ranges from few fem to seconds by Swift Heavy Ion Implantation to about one second using advanced Rapid Thermal Annealing. This book offers after an historical excursus selected contributions on fundamental and applied aspects of thermal processing of classical elemental semiconductors and other advanced materials including nanostructures with novel optoelectronic, magnetic, and superconducting properties. Special emphasis is given on the diffusion and segregation of impurity atoms during thermal treatment. A broad range of examples describes the solid phase and/or liquid phase processing of elemental and compound semiconductors, dielectric composites and organic materials.

Full Product Details

Author:   Wolfgang Skorupa ,  Heidemarie Schmidt
Publisher:   Springer International Publishing AG
Imprint:   Springer International Publishing AG
Edition:   Softcover reprint of the original 1st ed. 2014
Volume:   192
Dimensions:   Width: 15.50cm , Height: 1.80cm , Length: 23.50cm
Weight:   5.153kg
ISBN:  

9783319352879


ISBN 10:   3319352873
Pages:   321
Publication Date:   23 August 2016
Audience:   Professional and scholarly ,  Professional & Vocational
Format:   Paperback
Publisher's Status:   Active
Availability:   Manufactured on demand   Availability explained
We will order this item for you from a manufactured on demand supplier.

Table of Contents

From the Contents: The very early time.- Nanonet formation by constitutional supercooling of pulsed laser annealed, Mn-implanted germanium.- Metastable activation of dopants by solid phase epitaxial recrystallization.- Superconducting Ga-implanted Germanium.- Structural changes in SiGe/Si layers induced by fast crystallization.

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