Overview

Recently there have been major achievements in the study of semiconductor interfaces and microstructures for different materials and structural systems. Progress has been made through various experimental technologies and theoretical methods. This book provides an up-to-date review on these advances and includes the following major subjects: IV-IV, III-V and II-VI semiconductors and metal/semiconductor structures; new developments in growth methods; electric, optical, magnetic and structural characterization and properties; relative theories - electronic transport, phonos and interface modes; devices and applications. These materials are organized into four sections: general, III-V, II-VI and IV-IV, which offers comprehensive information and helps readers in following the new developments in the research frontiers of the above fields.

Full Product Details

Author:   Zhe Chuan Feng (Guangxi Univ, China)
Publisher:   World Scientific Publishing Co Pte Ltd
Imprint:   World Scientific Publishing Co Pte Ltd
Dimensions:   Width: 15.60cm , Height: 1.80cm , Length: 21.80cm
Weight:   0.463kg
ISBN:  

9789810209889

ISBN 10:   9810209886
Pages:   328
Publication Date:   01 August 1992
Audience:   College/higher education ,  Professional and scholarly ,  Postgraduate, Research & Scholarly ,  Professional & Vocational
Format:   Paperback
Publisher's Status:   Active
Availability:   Out of stock  
The supplier is temporarily out of stock of this item. It will be ordered for you on backorder and shipped when it becomes available.

Table of Contents

Miniband conduction in semiconductor superlattices, A. Sibille et al; interface modes in semiconductor superlattices, J. Menedez; interfaces in GaAs/AlAs quantum well structures, D. Gammon et al; optical and magneto-optical properties of narrow InGaAs-GaAs quantum wells, D.C. Reynolds and K.R. Evans; wide-bandgap alloy II-IV compound semiconductors - the (Zn,Cd)(Se,Te) quaternary system, R.E. Nahory et al; properties of Cd1-xMnxTe films and Cd1-xMnxTe-CdTe superlattices grown by pulsed laser evaporation and epitaxy, J.J. Dubowski; a study of high temperature SiC device structures, M.M. Anikin et al; Raman analyses of Si/Ge strained layer superlattices under hydrostatic pressure, I.P. Herman; and others.

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