Overview

I am happy indeed to write a foreword to this book. Since it was founded, the A. F. Ioffe Institute in Leningrad has been in the forefront of semiconductor research. I visited it in 1934, and vividly remember A *. F. Ioffe himself and J. Frenkel and their kindness to me, and to others attending the meeting to celebrate the hundredth anniversary of Mendeleev. In the last years my own work on non-crystalline semiconductors has been strongly influenced by the work of B. T. Kolomiets and his co-workers. The English-speaking world should know the great Institute better, and this book will, I am sure, help this to happen. Nevill Mott Cambridge, June 1985 v Contents INTRODUCTORY PART Abram Fyodorovich Ioffe (29th October 1880 - 14th October 1960) 3 V. M. Tuchkevich and V. Ya. Frenkel Semiconductors: A New Material for Electrical Engineering 11 A. F. Ioffe EXPERIMENTAL PART Photovoltaic Solar Energy Conversion 19 Zh. 1. Alferov New Optical Methods in Semiconductor Research 37 B. P. Zakharchenya Reemission, Quantum Efficiency and Lifetimes of Radiative Recombination in A3BS Semiconductors and Heterostructures 53 D. Z. Garbuzov Interacting Excitons in Germanium and Silicon 87 P. D. Altukhov, V. M. Asnin and A. A. Rogachev Liquid Semiconductors 129 A. R. Regel and A. A. Andreev Chalcogenide Vitreous Semiconductors 143 B. T. Kolomiets, E. A. Lebedev, V. M. Lyubin, T. F. Mazets and T. N. Mamontova vii viii CONTENTS Electron and Hole Recombination in Narrow Gap Semiconductors 169 B. L. Gelmont and V. I.

Full Product Details

Author:   V.Ya. Frenkel ,  V.M. Tuchkevich
Publisher:   Springer-Verlag New York Inc.
Imprint:   Springer-Verlag New York Inc.
Edition:   Softcover reprint of the original 1st ed. 1986
Dimensions:   Width: 17.80cm , Height: 2.80cm , Length: 25.40cm
Weight:   1.038kg
ISBN:  

9781461578420

ISBN 10:   1461578426
Pages:   562
Publication Date:   17 November 2012
Audience:   Professional and scholarly ,  Professional & Vocational
Format:   Paperback
Publisher's Status:   Active
Availability:   Manufactured on demand  
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Table of Contents

Introductory Part.- Abram Fyodorovich Ioffe (29th October 1880 – 14th October 1960).- Semiconductors: A New Material for Electrical Engineering.- Experimental Part.- Photovoltaic Solar Energy Conversion.- New Optical Methods in Semiconductor Research.- Reemission, Quantum Efficiency and Lifetimes of Radiative Recombination in A3B5 Semiconductors and Heterostructures.- Interacting Excitons in Germanium and Silicon.- Liquid Semiconductors.- Chalcogenide Vitreous Semiconductors.- Electron and Hole Recombination in Narrow Gap Semiconductors.- Optical Cooling of the Nuclear Spin System in a Semiconductor.- Hot Photoluminescence in GaAs Crystals.- The Photon Drag of Electrons in Semiconductors.- A Study of the Metal-Semiconductor Transition in Vanadium Oxides.- New Methods of Fast High Power Switching with Semiconductor Devices.- Theoretical Part.- A Theory of Thermomagnetic Phenomena in Semiconductors in a Quantizing Magnetic Field.- The Mutual Drag of Electrons and Electromagnetic Waves.- Dielectric Losses in Crystals.- Impurity Band and Related Phenomena in Doped Semiconductors.- Light Scattering from Heavily Doped Semiconductors.- Photogalvanic Effects in Noncentrosymmetric Crystals.- Strong Local Interelectron Attraction and “Critical” Potentials in Semiconductors and Insulators.- Urbach’s Rule in the Molecular Model of Amorphous Semiconductors.- The Capacity of an Abrupt Asymmetric p-n Junction.- Carrier Capture by Attraction Centers in Semiconductors.

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