Semiconductor Interfaces, Microstructures and Devices: Properties and applications

Author:   Zhe Chuan Feng
Publisher:   Taylor & Francis Ltd
ISBN:  

9780750301800


Pages:   308
Publication Date:   01 January 1993
Format:   Hardback
Availability:   Out of stock   Availability explained


Our Price $599.15 Quantity:  
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Semiconductor Interfaces, Microstructures and Devices: Properties and applications


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Overview

This volume contains 11 review papers, each focusing on a particular subject related to semiconductor interface problems. Topics include electric field induced localization in superlattices, quantum well infrared photodetectors, techniques for real time monitoring during semiconductor preparation and processing, optical microcavity structures and X-ray techniques. The book should also benefit those readers who are interested in obtaining an overview of the subject of layered III-V, II-VI, IV and IV-IV semiconductor structures, including growth, characterization, optics, properties and device applications.

Full Product Details

Author:   Zhe Chuan Feng
Publisher:   Taylor & Francis Ltd
Imprint:   Institute of Physics Publishing
Dimensions:   Width: 15.20cm , Height: 2.20cm , Length: 22.90cm
Weight:   0.635kg
ISBN:  

9780750301800


ISBN 10:   0750301805
Pages:   308
Publication Date:   01 January 1993
Audience:   College/higher education ,  Professional and scholarly ,  Postgraduate, Research & Scholarly ,  Professional & Vocational
Format:   Hardback
Publisher's Status:   Out of Print
Availability:   Out of stock   Availability explained

Table of Contents

Electric field induced localization in superlattices, Intersubband transitions and quantum well infrared photodetectors.. Real time spectroscopic ellipsometry monitoring of semiconductor growth and etching . X-ray reflectivity from heteroepitaxial. Spontaneous and stimulated emissions from optical microcavity structures. Radiative and nonradiative recombination in AlGaAs and InGaAsP heterostructures and some features of the corresponding quantum well laser diodes. Far-infrared cyclotron resonance of 2-dimensional electron gas in III-V semiconductor. Optics in lower dimensional quantum confined II-VI heterostructures. Growth and doping of silicon by low temperature molecular beam epitaxy. Point defects and charge traps in the Si/SiO^O2 system and related. Growth and characterization of silicon carbide polytypes for electronic.

Reviews

The selection of material is excellent...very interesting, focused on important issues and with rather informal presentation of crucial ideas and problems...of value for graduates in this discipline...individual articles contain elementary introductions and may be accessible to students in their final year. -E.M. Goldys


The selection of material is excellent...very interesting, focussed on important issues and with rather informal presentation of crucial ideas and problems...of value for graduates in this discipline...individual articles contain elementary introductions and may be accessible to students in their final year. --E M Goldys, Vol 31, 1/2 January/February 1994


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