Overview

Advance your understanding of semiconductor technology with this indispensable handbook, offering an in-depth look at the modeling, simulation, and fabrication of advanced nanoscale semiconductor field-effect transistors (FETs). Advanced nanoscale semiconductor field-effect transistors (FETs) represent a pivotal advancement in semiconductor technology, catering to the growing demand for energy-efficient low power electronic devices for emerging applications. This development has significantly impacted the electronics industry, particularly in the design and fabrication of integrated circuits for applications ranging from portable electronics to Internet of Things (IoT) devices. This book provides a comprehensive look at the modelling, simulation, characterization, and fabrication of modern semiconductor FET transistors to improve performance in terms of reduced weight and size, improved subthreshold characteristics and switching performance, and lower power consumption. Handbook of Advanced Semiconductor Field Effect Transistors provides deep insight into the evolving possibilities and challenges of emerging advanced nanoscale FETs. By focusing on the fundamentals of nanoscience and expert knowledge on advanced nanoscale semiconductors, this book serves as a well-rounded guide for novices and professionals looking to innovate in this growing field.

Full Product Details

Author:   Ekta Goel (National Institute of Technology Warangal, India) ,  Archana Pandey (Jaypee Institute of Information Technology, India) ,  Shiromani Balmukund Rahi (Mahamaya College of Agriculture Engineering and Technology, India) ,  Arun Samuel (National Engineering College in Kovilpatti, India)
Publisher:   John Wiley & Sons Inc
Imprint:   Wiley-Scrivener
ISBN:  

9781394412570

ISBN 10:   1394412576
Pages:   528
Publication Date:   20 November 2025
Audience:   Professional and scholarly ,  Professional & Vocational
Format:   Hardback
Publisher's Status:   Active
Availability:   Out of stock  
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Table of Contents

Preface xix 1 Semiconductor Reliability Analysis and Modeling 1 Reinhard S. Park 1.1 Introduction 2 1.2 History and Fundamental of Semiconductors 2 1.3 Brief Overview of Semiconductor Fabrication 3 1.4 Definition and Explanation of Bathtub Curve 5 1.5 Failure Mechanisms in Semiconductor 9 1.6 Failure Mechanism Modeling and Prediction 9 .7 Design for Reliability Strategies for Semiconductor 11 1.8 Conclusion 14 2 Unveiling the Potential of FinFETs: An Alternative Paradigm to MOSFET 19 Nitish Vashishth, Neha Goel and R. K. Yadav 2.1 Introduction to Transistor Technology 20 2.2 Implementation of Inverters and NAND Gates Using FinFETs 25 2.3 Implementation of Latches and Flip-Flops Using FinFETs 32 2.4 Implementation of SRAM Using FinFETs 33 2.5 Implementation of DRAM Using FinFETs 35 2.6 Challenges and Limitations of FinFET Technology 35 2.7 Potential Future Developments in FinFET Technology 37 2.8 Conclusion 39 3 Prospects of Negative-Capacitance Ferroelectric Field-Effect Transistors in Low-Power Electronics and Beyond 43 Ningombam Ajit Kumar, Khuraijam Nelson Singh, Sisira Hawaibam, Sushmita Dandeliya and Sonal Agrawal 3.1 Introduction 44 3.2 The Fundamentals of Negative Capacitance Ferroelectric FET 49 3.3 Modeling 57 3.4 Applications 59 3.5 Performance Optimization and Challenges 61 3.6 Comparative Analysis with Other Transistor Technologies 63 3.7 Future Prospects and Trends 64 3.8 Summary 66 4 Unleashing the Potential of Negative Capacitance Field Effect Transistors: A Paradigm Shift in Low-Power Electronics 73 Malvika, Jagritee Talukdar, Bijit Choudhuri and Kavicharan Mummaneni 4.1 Introduction 74 4.2 A Brief Survey 79 4.3 Simulation Strategy of NCFET and its Application in Circuit 81 4.4 Analysis of Device Performance and its Application as an Inverter 83 4.5 Conclusion 84 5 The Future of Low Power Electronics: Tunnel Field-Effect Transistors 89 Sourav Das, Ekta Goel and Kunal Singh 5.1 Introduction 90 5.2 Fundamental Principles of TFET Operation 90 5.3 Applications of TFETs 96 5.4 Literature Review 98 5.5 Simulation of Dual Metal Double Gate Hetero Pocket V-TFET 99 5.6 Conclusion 101 6 Novel Gate All Around FET with Enhanced Performance and Improved Process Sensitivity 107 Mandeep Singh Narula, Archana Pandey and Ajay Kumar 6.1 Introduction 108 6.2 Proposed Structure 110 6.3 Device Performance 113 6.4 Process Sensitivity 115 6.5 Conclusion 117 7 Rise of Tunnel FETs as a Revolutionary MOSFET Alternative 119 G. Munirathnam and Y. Murali Mohan Babu 7.1 Introduction to Tunnel FETs 120 7.2 Working Principles of Tunnel FETs 127 7.3 TFET Device Structure and Fabrication 135 7.4 TFET Performance Metrics 143 7.5 Applications of TFETs 149 7.6 Challenges and Future Directions 152 7.7 Case Studies and Practical Implementations 157 7.8 Conclusion 165 8 Tunnel Field Effect Transistors: Harnessing Light Sensitivity for Optical Sensing 169 Jagritee Talukdar, Malvika, Basab Das and Kavicharan Mummaneni 8.1 Introduction 170 8.2 A Brief Overview 172 8.3 Photo Sensing in TFETs: Principle of Operation and Geometry 173 8.4 Simulation Strategy for TFET-Based Photosensor 175 8.5 Sensitivity Parameters of Photosensor 175 8.6 An Extended Source TFET-Based Photosensor 177 8.7 Conclusion 180 9 2D Material Based FET Sensors 183 Archana Pandey, Jyoti Pant, Medha Joshi, Nitanshu Chauhan and Mandeep Singh 9.1 Introduction 183 9.2 Properties and Applications of 2D Materials 185 9.3 Sensing Mechanisms 188 9.4 Challenges and Future Directions 191 9.5 Conclusion 195 10 2D Material-Based FETs for Next Generation Integrated Circuits 199 Aruru Sai Kumar, V. Bharath Sreenivasulu, K. Sarangam, P. Ravi Sankar and K. Nishanth Rao 10.1 Introduction 200 10.2 Literature Survey 203 10.3 Proposed Methodology 205 10.4 Result Analysis 206 10.5 Conclusion 213 11 MOSHEMT—Device Background, Materials, and Structures for Different Applications 217 Ananya Dastidar, Tapas Kumar Patra and Sushanta Kumar Mohapatra 11.1 Classical MOSFETs and their Issues 218 11.2 HEMT and Its Challenges 219 11.3 MOSHEMT 220 11.4 MOSHEMT Structural Engineering 228 11.5 MOSHEMT for Biosensing Applications 234 11.6 Summary 241 12 Quantum Computing and Digital Twins with Development of Semiconductor Field Effect Transistors 255 Shiromani Balmukund Rahi and Young Suh Song 12.1 Introduction to Quantum Computing: Concept, History, and Principles 256 12.2 Understanding Digital Twins 258 12.3 Semiconductor Development: Past, Present, and Future 264 12.4 Integration of Quantum Computing and Digital Twins 266 12.5 Applications and Impact Across Industries 268 12.6 Ethical and Societal Implications 270 12.7 Future Directions 271 12.8 Conclusion 272 13 Low Voltage Circuit Design with FinFETs 277 Sarita Yadav and Nitanshu Chauhan 13.1 Introduction 278 13.2 Advent of FinFETs 279 13.3 Critical Device-Circuit Co-Design Challenges in Low-Voltage Domain for FinFETs 282 13.4 Inverter Capacitances in Low-Voltage Region of Operation 287 13.5 Minimum Supply Voltage for FinFET Logic Gates 294 13.6 Conclusion 299 14 A Novel Low-Power Approach of 8-Bit Vedic Multiplier Using Reversible Logic Gates 305 Aruru Sai Kumar, K. Sarangam, P. Ravi Sankar, K. Nishanth Rao and Yashika Gaidhani 14.1 Introduction 306 14.2 Literature Survey 309 14.3 Proposed Methodology 310 14.4 Result Analysis 317 14.5 Conclusion 320 15 64-Bit High Speed Parallel Prefix Adder Architectures 323 B. Harish and M.S.S. Rukmini 15.1 Introduction 323 15.2 Implementation of PPA in 64-Bit 327 16 Design and Implementation of High-Performance Adaptive Baud Rate Generator for IoT Applications 337 B. Harish, N. Jahnavi, M. Brammani, Md. Karishma and N. J. L. S. Manasa 16.1 Introduction 338 16.2 Fundamentals of Baud Rate Generation 340 16.3 Requirements and Challenges in IoT Baud Rate Generation 345 16.4 State-of-the-Art Techniques in Baud Rate Generation 349 16.5 High-Performance Adaptive Baud Rate Generators 351 16.6 Results and Discussion 354 16.7 Future Directions and Challenges 359 16.8 Conclusion 360 17 Biomedical Applications in VLSI Field 365 Jyoti Kandpal, Divya Sharma and Ekta Goel 17.1 Introduction 365 17.2 Role of VLSI in Biomedical Application 367 17.3 Application 369 17.4 Conclusion 380 18 Self-Powered Biosensor Field-Effect Transistors 383 Archana Pandey and Shradha Saxena 18.1 Introduction to Biosensors 383 18.2 Field-Effect Transistor (FET)-Based Biosensors 386 18.3 Label-Free Detection with FET Biosensors 392 18.4 Need for Self-Powering Mechanisms in Biosensors 393 18.5 Energy Harvesting in Biosensor FET Technology 394 18.6 Applications of Self-Powered Biosensor FETs 395 18.7 Conclusion 395 19 Vertical Tunneling FETs (V-TFETs): A Novel Approach in Biosensing Technology 401 Sourav Das, Ekta Goel and Kunal Singh 19.1 Introduction 401 19.2 Types of Biosensors 403 19.3 Comparison of FET- and TFET-Based Biosensors 404 19.4 Dielectric Modulation in TFETs: Principle and Design 405 19.5 Literature Review 408 19.6 Simulation Methodology for a DM TFET as a Label-Free Biosensor 408 19.7 Sensitivity Parameters 409 19.8 Non-Idealities in Dielectric-Modulated Biosensors 410 19.9 Impact of Charged Biomolecules on Sensitivity 411 19.10 Device Architecture and Simulation of Model 412 19.11 Conclusion 414 20 Micro-Electromechanical System (MEMS) and Field-Effect Transistor (FET)–Coupled Sensors 419 Shradha Saxena and Archana Pandey 20.1 Introduction to Micro-Electromechanical System (MEMS)–Based Sensor 420 20.2 Introduction to Field-Effect Transistor (FET)–Based Sensors 422 20.3 Introduction of MEMS-FET Sensor 426 20.4 Applications of MEMS-FET Sensors 427 20.5 Self-Powered MEMS-FET Sensors 433 20.6 Future Direction and Challenges 435 20.7 Conclusion 436 21 Memory Design Using Conventional DRAM Unit Cell 439 Husien Salama, Zina Guesmi, Faouzi Nasri, Billel Smaani, Khalifa Ahmed Salama and Ahmed Gawa 21.1 Introduction 440 21.2 Conventional DRAM Unit Cell Structure 443 21.3 Design Considerations for Conventional DRAM 450 21.4 Challenges and Limitations of Conventional DRAM 455 21.5 Conclusion and Future Directions 457 22 Ensuring Robustness: Reliability Analysis of 4H-SiC Trench MOSFETs in High-Performance Analog Applications 465 Ajay Kumar, Mandeep Singh Narula, Neha Gupta, Aditya Jain, Kaushal Kumar and Amit Kumar Goyal 22.1 Introduction 466 22.2 Device Design and Its Parameters 468 22.3 Methodology 469 22.4 Results and Discussion 469 22.5 Conclusion 475 References 476 About the Editors 479 Index 481

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Author Information

Ekta Goel, PhD is an assistant professor at the National Institute of Technology Warangal. She has published one book chapter and over 50 research articles in peer-reviewed journals and conferences. Her areas of research include modeling and simulation of advanced nanoscale MOS devices, VLSI circuit simulation, photodiodes, and photovoltaic cells. Archana Pandey, PhD is a senior assistant professor in the Department of Electronics and Communication Engineering at the Jaypee Institute of Information Technology. She has published numerous articles in peer-reviewed international journals and conferences. Her research areas include novel semiconductor devices, FinFETs, device modeling, delay modeling of digital circuit modules, VLSI device-circuit co-design, nanosheet FETs, and FET biosensors. Shiromani Balmukund Rahi, PhD is an assistant professor at the Mahamaya College of Agriculture, Engineering, and Technology. He has published 25 research papers, two conference proceedings, and 20 book chapters in addition to editing seven books. His work focuses on the development of IoTs for smart applications ultra-low power devices such as tunnel FETs, negative capacitance FETs, and nanosheets. Arun Samuel, PhD is a professor at the National Engineering College in Kovilpatti, India. He has over 90 publications to his credit and is a lifetime member of the Institute of Engineering and the Institute of Electrical and Electronics Engineers. His research interests include modelling and simulation of multi-gate transistors and tunnel field-effect transistors.

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