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OverviewSemiconductors are well known as the main materials of modem solid-state electronics. They have held the attention of researches and engineers since the brilliant invention of the semiconductor transistor by Bardeen, Brattain and v V Shockley in the middle ofthe 20th century. Silicon, germanium, AIIIB and AIIB ) compounds have been widely used in discrete semiconductor devices and microelectronic and nanoelectronic integrated systems. Each ofthese materials has separately met specific physical and technological requirements to provide formation ofsolid-state structures with the best electronic or optical performance. However, attempts to combine them within integrated circuit appear to be ineffective or even technologically impossible. Thus, material and related technological compatibilities are important for further progress, particularly in microelectronics, optoelectronics and nanoelectronics. This stimulates an increasing interest in silicides and silicon-germanium alloys, which provide new prospects for silicon-based integration. Elements from the Periodic Table form more than 180 silicides, which are chemical compounds of silicon with different metals. Most of them, except the silicides of lanthanides and actinides, are shown in Table 1. Along with appropriate compatibility with silicon and easy formation by silicidation in a metal-silicon couple, silicides are characterized by high thermal stability and resistance to oxidation. The majority ofthem are metallic and have low resistivity. Exactly metallic silicides were first employed for interconnections, gates in MOS structures, ohmic contacts, and Schottky barriers in silicon integrated circuits. For a comprehensive overview of their properties and general features of the formation technology the reader may address the books and reviews [1-10]. Full Product DetailsAuthor: Victor E. BorisenkoPublisher: Springer-Verlag Berlin and Heidelberg GmbH & Co. KG Imprint: Springer-Verlag Berlin and Heidelberg GmbH & Co. K Edition: Softcover reprint of the original 1st ed. 2000 Volume: 39 Dimensions: Width: 15.50cm , Height: 1.90cm , Length: 23.50cm Weight: 0.557kg ISBN: 9783642640698ISBN 10: 3642640699 Pages: 348 Publication Date: 27 September 2011 Audience: Professional and scholarly , Professional & Vocational Format: Paperback Publisher's Status: Active Availability: Manufactured on demand  We will order this item for you from a manufactured on demand supplier. Table of Contents1 General Material Aspects.- 1.1 Crystalline Structure and Mechanical Properties.- 1.2 Thermodynamics of Silicidation.- 1.3 Kinetics of Silicidation.- 1.4 Thermal Oxidation of Silicides.- 2 Thin Film Silicide Formation.- 2.1 Silicides and Silicon Epitaxial Relationships.- 2.2 Diffusion Synthesis.- 2.3 Ion Beam Synthesis.- 2.4 Atomic and Molecular Deposition.- 2.5 General Comments on Silicide Formation Techniques.- 3 Crystal Growth.- 3.1 Methods of Crystal Growth and Material Problems.- 3.2 Crystal Growth by Chemical Vapor Transport Reactions.- 3.3 Crystal Growth from the Flux.- 3.4 Crystal Growth from the Melt.- 3.5 Summary.- 4 Fundamental Electronic and Optical Properties.- 4.1 Basic Relationships.- 4.2 Electronic Band Structure.- 4.3 Interband Optical Spectra.- 4.4 Light Emission.- 4.5 Infrared Optical Response and Raman Scattering.- 4.6 Concluding Remarks.- 5 Transport Properties.- 5.1 Free Charge Carriers and Their Mobility in Semiconductors.- 5.2 Experimental Resistivities.- 5.3 Mobility of Charge Carriers.- 5.4 Thermoelectric Properties.- 5.5 Concluding Remarks.- References.ReviewsAuthor InformationTab Content 6Author Website:Countries AvailableAll regions |
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