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Author:   Kevin Peter O'Donnell ,  Volkmar Dierolf
Publisher:   Springer
Imprint:   Springer
Edition:   2010 ed.
Volume:   124
Dimensions:   Width: 15.50cm , Height: 2.30cm , Length: 23.50cm
Weight:   0.723kg
ISBN:  

9789048128761

ISBN 10:   9048128765
Pages:   355
Publication Date:   27 July 2010
Audience:   Professional and scholarly ,  Professional & Vocational
Format:   Hardback
Publisher's Status:   Active
Availability:   In Print  
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Table of Contents

Theoretical Modelling of Rare Earth Dopants in GaN.- RE Implantation and Annealing of III-Nitrides.- Lattice Location of RE Impurities in IIINitrides.- Electroluminescent Devices Using RE-Doped III-Nitrides.- Er-Doped GaN and InxGa1-xN for Optical Communications.- Rare-Earth-Doped GaN Quantum Dot.- Visible Luminescent RE-doped GaN, AlGaN and AlInN.- Combined Excitation Emission Spectroscopy (CEES) of RE Ions in Gallium Nitride.- Excitation Mechanisms of RE Ions in Semiconductors.- High-Temperature Ferromagnetism in the Super-Dilute Magnetic Semiconductor GaN:Gd.- Summary and Prospects for Future Work.

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