Overview

Predictive Simulation of Semiconductor Processing enables researchers and developers to extend the scaling range of semiconductor devices beyond the parameter range of empirical research. It requires a thorough understanding of the basic mechanisms employed in device fabrication, such as diffusion, ion implantation, epitaxy, defect formation and annealing, and contamination. This book presents an in-depth discussion of our current understanding of key processes and identifies areas that require further work in order to achieve the goal of a comprehensive, predictive process simulation tool.

Full Product Details

Author:   Jarek Dabrowski ,  Eicke R. Weber ,  Eicke R. Weber
Publisher:   Springer-Verlag Berlin and Heidelberg GmbH & Co. KG
Imprint:   Springer-Verlag Berlin and Heidelberg GmbH & Co. K
Edition:   Softcover reprint of hardcover 1st ed. 2004
Volume:   72
Dimensions:   Width: 15.50cm , Height: 2.60cm , Length: 23.50cm
Weight:   0.859kg
ISBN:  

9783642058042

ISBN 10:   3642058043
Pages:   490
Publication Date:   04 December 2010
Audience:   Professional and scholarly ,  Professional and scholarly ,  Professional & Vocational ,  Postgraduate, Research & Scholarly
Format:   Paperback
Publisher's Status:   Active
Availability:   Out of stock  
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Table of Contents

Reviews

"From the reviews: ""This book presents an in-depth discussion of our current understanding of key processes and identifies areas that require further work in order to achieve the goal of a comprehensive, predictive process simulation tool. Eleven contributions make up the book; each is supported by a wealth of references. … A valuable reference and guide to have on the shelf for frequent use and study. Certainly, the expertise and research experience of the contributors cannot be questioned. Summing up ... a richly rewarding work."" (Current Engineering Practice, Vol. 47 (3), 2004-2005)"

From the reviews: This book presents an in-depth discussion of our current understanding of key processes and identifies areas that require further work in order to achieve the goal of a comprehensive, predictive process simulation tool. Eleven contributions make up the book; each is supported by a wealth of references. ! A valuable reference and guide to have on the shelf for frequent use and study. Certainly, the expertise and research experience of the contributors cannot be questioned. Summing up ... a richly rewarding work. (Current Engineering Practice, Vol. 47 (3), 2004-2005)

From the reviews: This book presents an in-depth discussion of our current understanding of key processes and identifies areas that require further work in order to achieve the goal of a comprehensive, predictive process simulation tool. Eleven contributions make up the book; each is supported by a wealth of references. ... A valuable reference and guide to have on the shelf for frequent use and study. Certainly, the expertise and research experience of the contributors cannot be questioned. Summing up ... a richly rewarding work. (Current Engineering Practice, Vol. 47 (3), 2004-2005)

Author Information

"J. Dabrowski: Born in Warsaw, Poland, Sept. 29, 1958. PhD, Institute of Physics of the Polish Academy of Science (IF PAN), Warsaw, 1989. Scientific staff member IF PAN 1983-1992; postdoctoral fellow Fritz Haber Inbstitute of the Max Planck Society, Berlin, Germany, 1990-1991; postdoctoral fellow Xerox Palo Alto Research Center, California, 1992; since 1993 with IHP-microelectronics, Frankfurt (Oder), Germany. Conference series chairman, Challenges in Predictive Process Simulation (1997, 2000, 2002); international advisory commmittee member, International Training Institute for Materials Science, Hanoi, Vietnam. Project leader, German Research Society (1998-2000); von Neuman Institute for Computing (since 1993). Author (monograph), ""Silicon surfaces and formation of interfaces; basic science in the industrial world"" (World Scientific, 2000). Editor (book) , """"Recent Developments in Vacuum Science and Technology"" (Research Signpost, 2003). Research in atomic diffusion mechanism in solid state; atomic structure of surfaces and semiconductor/dielectric interfaces; atomic structure of defects in semiconductors and insulators; signal processing for telecommunication. Achievements include discovery of atomic structure of the clean Si(113) surface; atomic structure of the main electron trap in GaAs (EL2 defect); atomic structure of the interface between a high-K dielectric (Pr2O3) and Si(001). Patents for silicon microelectronic technology; patents pending for telecommunication."

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