Physics of High-Speed Transistors

Author:   Juras Pozela
Publisher:   Springer Science+Business Media
Edition:   1993 ed.
ISBN:  

9780306446191


Pages:   337
Publication Date:   31 December 1993
Format:   Hardback
Availability:   In Print   Availability explained
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Physics of High-Speed Transistors


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Overview

This book examines the physical principles behind the operation of high-speed transistors operating at frequencies above 10 GHz and having switching times less than 100 psec. If the 1970s cannot be remembered for the opportunities for creating and extensively using transistors operating at such high speeds, then, the situation has changed radically because of rapid progress in sub micrometer technology for manufacturing transistors and integrated circuits from GaAs and other semiconductor materials and the powerful influx of new physical concepts. Not only have transistors having switching speeds of 50-100 psec operating in the 10-20 GHz region been created in recent years, but the possibilities for manufacturing transistors operating one to two orders of magnitude faster have been revealed. As superhigh-speed transistors have been created, many of the most important areas of technology such as communications, computing technology, television, radar, and the manufacture of scientific, industrial, and medical equipment have qualitatively changed. Microwave transistors operating at millimeter wavelengths make it possible to produce compact and highly efficient equipment for communications and radar technology. Transistors with switching speeds better than 10-100 psec make it possible to increase the speed of microprocessors and other computer components to tens of billions of operations per second and thereby solve one of the most pressing problems of modern electronics - increasing the speed of digital information processing.

Full Product Details

Author:   Juras Pozela
Publisher:   Springer Science+Business Media
Imprint:   Kluwer Academic/Plenum Publishers
Edition:   1993 ed.
Dimensions:   Width: 17.80cm , Height: 2.10cm , Length: 25.40cm
Weight:   1.490kg
ISBN:  

9780306446191


ISBN 10:   0306446197
Pages:   337
Publication Date:   31 December 1993
Audience:   College/higher education ,  Professional and scholarly ,  Undergraduate ,  Postgraduate, Research & Scholarly
Format:   Hardback
Publisher's Status:   Active
Availability:   In Print   Availability explained
This item will be ordered in for you from one of our suppliers. Upon receipt, we will promptly dispatch it out to you. For in store availability, please contact us.

Table of Contents

1. High-Speed Transistor Parameters.- 2. Technological and Physical Limitations on Transistor Miniaturization.- 3. Maximum Drift Velocity in Semiconductors.- 4. Homojunction Field-Effect and Bipolar Transistors.- 5. Heterostructure Field-Effect Transistors.- 6. Heterostructure Bipolar Transistors.- 7. Hot-Electron Transistors.- 8. Analog Transistors.- 9. Quantum-Effect Transistors.- 10. High-Speed Devices and Integrated Circuits.- Index of Transistor Types and Their Abbreviations.

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