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OverviewDuring the past two decades, revolutionary breakthroughs have occurred in the understanding of ferroelectric materials, both from the perspective of theory and experiment. First principles approaches, including the Berry phase formulation of ferroelectricity, now allow accurate, quantitative predictions of material properties, and single crystalline thin films are now available for fundamental studies of these materials. In addition, the need for high dielectric constant insulators and nonvolatile memories in semiconductor applications has motivated a renaissance in the investigation of these materials. This book addresses the paradigmatic shifts in understanding brought about by these breakthroughs, including the consideration of novel fabrication methods and nanoscale applications of these materials, and new theoretical methods such as the effective Hamiltonian approach and density functional theory. Full Product DetailsAuthor: Karin M. Rabe , Charles H. Ahn , Jean-Marc TrisconePublisher: Springer-Verlag Berlin and Heidelberg GmbH & Co. KG Imprint: Springer-Verlag Berlin and Heidelberg GmbH & Co. K Edition: Softcover reprint of hardcover 1st ed. 2007 Volume: 105 Dimensions: Width: 15.50cm , Height: 2.10cm , Length: 23.50cm Weight: 0.718kg ISBN: 9783642070969ISBN 10: 3642070965 Pages: 388 Publication Date: 30 November 2010 Audience: Professional and scholarly , Professional & Vocational Format: Paperback Publisher's Status: Active Availability: Out of stock  The supplier is temporarily out of stock of this item. It will be ordered for you on backorder and shipped when it becomes available. Table of ContentsAppendix B – Material–Substrate Combinations Tables.- Modern Physics of Ferroelectrics: Essential Background.- Theory of Polarization: A Modern Approach.- A Landau Primer for Ferroelectrics.- First-Principles Studies of Ferroelectric Oxides.- Analogies and Differences between Ferroelectrics and Ferromagnets.- Growth and Novel Applications of Epitaxial Oxide Thin Films.- Ferroelectric Size Effects.- Nanoscale Studies of Domain Walls in Epitaxial Ferroelectric Thin Films.- APPENDIX A – Landau Free-Energy Coefficients.ReviewsAuthor InformationTab Content 6Author Website:Countries AvailableAll regions |
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