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OverviewThe application of the 111-V compound semiconductors to device fabrica tion has grown considerably in the last few years. This process has been stimulated, in part, by the advancement in the understanding of the interface physics and chemistry of the III-V's. The literature on this subject is spread over the last 15 years and appears in many journals and conference proceedings. Understanding this literature requires consider able effort by the seasoned researcher, and even more for those starting out in the field or by engineers and scientists who wish to apply this knowledge to the fabrication of devices. The purpose of this book is to bring together much of the fundamental and practical knowledge on the physics and chemistry of the 111-V compounds with metals and dielectrics. The authors of this book have endeavored to provide concise overviews of these areas with many tahles ancI grarhs whic. h c. omr>are and summarize the literature. In this way, the book serves as both an insightful treatise on III-V interfaces and a handy reference to the literature. The selection of authors was mandated by the desire to include both fundamental and practical approaches, covering device and material aspects of the interfaces. All of the authors are recognized experts on III-V interfaces and each has worked for many years in his subject area. This experience is projected in the breadth of understanding in each chapter. Full Product DetailsAuthor: Carl WilmsenPublisher: Springer-Verlag New York Inc. Imprint: Springer-Verlag New York Inc. Edition: Softcover reprint of the original 1st ed. 1985 Dimensions: Width: 15.20cm , Height: 2.50cm , Length: 22.90cm Weight: 0.703kg ISBN: 9781468448375ISBN 10: 1468448374 Pages: 465 Publication Date: 22 March 2012 Audience: Professional and scholarly , Professional & Vocational Format: Paperback Publisher's Status: Active Availability: Manufactured on demand  We will order this item for you from a manufactured on demand supplier. Table of Contents1. III-V Semiconductor Surface Interactions.- 1. Introduction.- 2. Interface States and Schottky Barriers.- 3. Clean Surfaces of III-V Semiconductors.- 4. Adsorption of Gases on Clean III-V Semiconductors.- 5. Metal Films on Clean III-V Surfaces.- 6. The Electrical Nature of Intimate Interfaces.- 7. Conclusions.- References.- 2. Schottky Diodes and Ohmic Contacts for the III-V Semiconductors.- 1. Introduction.- 2. Electrical Properties of Metal-Semiconductor Contacts.- 3. Schottky-Diode Technology.- 4. Ohmic-Contact Technology.- References.- 3. The Deposited Insulator/III-V Semiconductor Interface.- 1. Introduction.- 2. General Overview of the Deposited Insulator/III-V Interface.- 3. Choice of Insulator and Deposition Technique.- 4. Interfacial Properties.- 5. Experimental Results.- 6. Concluding Remarks.- References.- 4. Electrical Properties of Insulator-Semiconductor Interfaces on III-V Compounds.- 1. Introduction.- 2. Theoretical Background.- 3. Gallium Arsenide.- 4. Indium Antimonide.- 5. Indium Phosphide.- 6. Indium Arsenide.- 7. Gallium Phosphide.- 8. Gallium Arsenide Phosphide.- 9. Whither Surface States.- 10. Low-Temperature Deposition of Dielectric Layers.- 11. Conclusion.- References.- 5. III-V Inversion-Layer Transport.- 1. Introduction.- 2. Quantization.- 3. Surface Scattering Mechanisms.- 4. Phonon Scattering.- 5. Experimental Results.- Summary.- References.- 6. Interfacial Constraints on III-V Compounds MIS Devices.- 1. Introduction.- 2. Dielectric-Semiconductor Interfacial Phenomena.- 3. MIS-Device Characteristics.- 4. Device Results.- 5. Epilogue.- References.- 7. Oxide/III-V Compound Semiconductor Interfaces.- 1. Introduction.- 2. The Chemically Cleaned Surface.- 3. Thermal Oxides.- 4. Anodic Oxides.- 5. Plasma-Grown Oxide.- References.ReviewsAuthor InformationTab Content 6Author Website:Countries AvailableAll regions |
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