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OverviewSince the beginning of semiconductor era in microelectronics the methodology of reliability assessment became a well established area. In most cases the reliability assessment involves statistical methods for safe operating area and long term re- ability parameters at the development of semiconductor processes, components and systems. At the same time in case of catastrophic failures at any development phase the major practical method is failure analysis (FA). However FA is mainly dealing with detection of consequences of some irreversible event that already happened. This book is focused on the most important and the less summarized reliability aspects. Among them: catastrophic failures, impact of local structural inhomo- neities, major principles of physical limitation of safe-operating area (SOA), physical mechanisms of the current instability, filamentation and conductivity modulation in particular device types and architectures. Specifically, the similar principles and regularities are discussed for elect- static discharge (ESD) protection devices, treating them as a particular case of pulsed power devices. Thus both the most intriguing applications and reliability problems in case of the discrete and the integrated components are covered in this book. Full Product DetailsAuthor: Vladislav A. Vashchenko , V. F. SinkevitchPublisher: Springer-Verlag New York Inc. Imprint: Springer-Verlag New York Inc. Edition: Softcover reprint of hardcover 1st ed. 2008 Dimensions: Width: 15.50cm , Height: 1.80cm , Length: 23.50cm Weight: 0.528kg ISBN: 9781441945051ISBN 10: 1441945059 Pages: 330 Publication Date: 27 October 2010 Audience: Professional and scholarly , Professional & Vocational Format: Paperback Publisher's Status: Active Availability: In Print This item will be ordered in for you from one of our suppliers. Upon receipt, we will promptly dispatch it out to you. For in store availability, please contact us. Table of ContentsReviewsAuthor InformationTab Content 6Author Website:Countries AvailableAll regions |