Overview

Investigations of photoelectric effects occupy an important place in studies of semiconductors. Recently investigations of photoconductivity and photoelectromotive forces have been intensified in step with the general development of semi­ conductor physics. An important feature of current work is an approach which combines several experimental methods of investigating photoconductivity by meas­ uring a number of the parameters which govern it (e. g., quantum yield, lifetime, etc.). In other words the study of steady-state photoconductiv­ ity is being replaced by the study of photoconductivity kinetics. Another important feature is the extension of the studies beyond pure­ ly photoelectric phenomena by the use of radiations other than light. Such an extension is justified not only by practical requirements but also by the close similarity between the ionization processes produced by different radiations. It can be shown that the charge carriers liberated by light and other radiations are not unique as far as their behavior in a crystal lattice is concerned. This can be seen from the following considerations.

Full Product Details

Author:   Solomon M. Ryvkin ,  Solomon M Ryvkin
Publisher:   Springer-Verlag New York Inc.
Imprint:   Springer-Verlag New York Inc.
Edition:   1964 ed.
Dimensions:   Width: 17.80cm , Height: 2.20cm , Length: 25.40cm
Weight:   0.795kg
ISBN:  

9781468415599

ISBN 10:   146841559
Pages:   402
Publication Date:   03 April 2012
Audience:   Professional and scholarly ,  Professional & Vocational
Format:   Paperback
Publisher's Status:   Active
Availability:   Manufactured on demand  
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Table of Contents

I Phenomenological Description of Photoconductivity.- §1. Equilibrium and Nonequilibrium Carriers; Nonequilibrium Conductivity.- §2. Some Characteristics of Equilibrium Conductivity.- §3. Energy Distribution of Nonequilibrium Carriers.- §4. Lifetime of Nonequilibrium Carriers.- §5. Relaxation of Nonequilibrium Conductivity.- A. Linear Recombination.- B. Quadratic Recombination.- C. Instantaneous Value of the Lifetime.- §6. Photoconductivity of Finite Samples.- II Methods of Measuring Steady-State Photoconductivity.- §7. Methods Using Continuous and Modulated Illumination.- §8. Calculation of Photoconductance from Experimental Data.- A. Constant-Field Regime.- B. Constant-Current Regime.- C. Maximum-Sensitivity Regime.- D. Case of Weak Relative Photoconductance.- §9. Sensitivity Threshold.- §10. Optimum Sample Dimensions for Photoconductance Measurement.- §11. Elimination of the Influence of Contacts.- A. Criterion for the Elimination of the Influence of Neutral Contacts.- B. Probe Method for Measuring Photoconductance.- §12. Elimination of the Influence of Nonuniformity of Illumination.- III Determination Of The Principal Phenomenological Parameters ? and ? From Studies of Photoconductivity Kinetics.- §13. Frequency Dependence of Photoconductivity.- A. Square Modulation of Light Intensity.- 1. Symmetric Square Light Waves.- 2. Asymmetric Square Light Waves (t0i?t0d).- B. Sinusoidal Modulation of Light Intensity.- §14. Determination of the Lifetime by the Phase-Shift Compensation Method.- A. Sinusoidal Modulation.- B. Square Modulation.- C. Sensitivity of the Phase-Shift Compensation Method.- §15. Investigation of Relaxation in the Nonlinear Case.- §16. Some Methods of Modulating the Light-Beam Intensity.- IV Processes of Generation of NonequilibriumCarriers.- §17. Internal Photoeffect (Excitation Due to Absorption of Light).- §18. Ionization by High-Energy Quanta and Particles.- §19. Other Methods of “Generating” Nonequilibrium Carriers.- A. Use of “Nonneutral” Contacts.- B. Formation of Nonequilibrium Carriers by Impact Ionization.- V Recombination through Simple Local Centers.- §20. Introduction. Limitations Imposed by the Laws of Conservation of Energy and Momentum.- §21. Recombination through Local Centers (Traps). Capture of Carriers by Local Centers.- §22. Semiconductor with One Type of Trap.- §23. System with One Type of Trap. Steady-State Case.- A. The Case of Low Trap Concentration.- B. The Case of Arbitrary Trap Concentration.- C. Conclusions.- §24. The Case of Several Types of Trap.- §25. Relaxation of Nonequilibrium Conductivity.- A. Low Trap Concentration.- B. High Trap Concentration.- VI Processes of Nonequilibrium Carrier Trapping.- §26. Recombination Centers and Trapping Centers.- A. Demarcation Levels.- (i) Unipolar Photoconductivity.- §27. Influence of Trapping Levels on Steady-State Characteristics and on the Relaxation of Nonequilibrium Conductivity (Low Degree of Population of the Trapping Levels—Linear Case).- A. Relaxation in the Presence of ?-Type Trapping Centers.- B. Relaxation in the Presence of ?-Type Trapping Centers.- C. Criterion for Distinguishing ? and ? Trapping.- §28. Influence of ? Trapping on the Phenomenological Yield and Lifetime in the General Case of Arbitrary Population of the Trapping Levels.- §29. Influence of Steady Illuminationen the Relaxation of Photoconductivity in the Presence of ?-Trapping.- (ii) Ambipolar Photoconductivity.- §30. Influence of Trapping Levels on Steady-State Photoconductivity and Steady-State Lifetimes of Electronsand Holes.- §31. Influence of Trapping Levels on the Relaxation OI Non-equilibrium Ambipolar Conductivity.- (iii) “Nonlinear” Relaxation Processes in the Case of High Degree of Population of the Trapping Levels.- §32. Influence of High Degree of Population of the Trapping Levels on the Initial Stages of Photoconductivity Rise.- §33. Influence of Trapping Levels on the General Nature of the Photoconductivity Relaxation Curves.- §34. Conclusions.- VII Recombination through Multiply-Charged Centers.- §35. Energy Spectra of Complex Centers.- §36. Lifetime in the Case of Recombination through Multiply-Charged Centers.- VIII Direct (Interband) Recombination.- §37. Radiative Recombination of Free Electrons and Holes.- §38. Investigation of Radiative Recombination Spectra.- A. Induced Radiative Recombination.- §39. Influence of Trapping on Radiative Recombination.- §40. Impact Recombination.- A. High Excitation Level.- B. Low Excitation Level.- IX Impurity Photoconductivity.- §41. Characteristic Features of Impurity Photoconductivity.- §42. Impurity Photoconductivity Related to One Type of Level.- A. Lux-Ampere Characteristics.- B. Relaxation Curves.- C. Influence of Trapping.- §43. Criterion for Unipolar Impurity Photoconductivity.- A. Thermo-Optical Transitions.- B. Double Optical Transitions.- X Some Effects of Combined Excitation.- §44. Induced Impurity Photoconductivity.- §45. Optical Charge Exchange between Impurity Centers.- A. Influence of Charge Exchange on the Kinetics of Impurity Photoconductivity.- B. “Limiting” Optical Charge Exchange between Impurity Centers.- C. Current Oscillations Related to Induced Impurity Breakdown.- D. Hopping Photoconductivity and Inter impurity Recombination.- §46. Thermally Stimulated Conductivity.- §47. Sign ofthe Photoconductivity of High-Resistivity Semiconductors.- §48. Method of Long-Wave length Probing of Local Levels.- XI Meaning of the Concept “Lifetime”.- §49. Lifetime of Carriers in the Bands.- §50. Microscopic and Relaxation Lifetimes.- A. Impurity Photoconductivity.- B. Fundamental Photoconductivity. Recombination through Traps.- C. The Meaning of Relaxation Lifetime.- XII Diffusion and Drift of Nonequilibrium Carriers (Unipolar Case).- §51. General Considerations and Fundamental Equations.- §52. Carrier Density, Charge, and Field Distributions during Diffusion under Weak Excitation Conditions. Debye Screening Length.- §53. Effective Time for the Establishment of Diffusion Equilibrium (“Maxwell Time Constant”).- §54. Density Distribution in the Presence of an External Electric Field.- §55. Debye Screening Length for Low-Conductivity Semiconductors and for Dielectrics.- §56. “Secondary” and “Conduction” Photocurrents in Semiconductors.- A. Introduction.- B. Photocurrent Kinetics.- C. “Primary” Photocurrent.- D. “Secondary” Photocurrent.- E. Some Terminological Problems.- XIII Diffusion and Drift of Nonequilibrium Carriers (Ambipolar Case).- §57. Diffusion and Drift of Minority Carriers.- §58. Experimental Method of Determining the Diffusion Length lD and Lifetime ? of Minority Carriers.- §59. Direct Method of Determining the Minority-Carrier Mobility.- §60. Determination of the Ratio of the Mobility to the Diffusion Coefficient for Nonequilibrium Minority Carriers.- §61. Method of Determining the Lifetime and Mobility of Minority Carriers Using a Traveling Light Spot.- A. Compensation (Null) Method for Measuring Mobility.- §62. Quantitative Discussion of Diffusion and Drift for Any Ratio of the Electron and Hole Densities.-§63. Dember emf.- XIV Some Photomagnetoelectric and Photomagnetodensity Effects.- (i) Photomagnetoelectric Effects.- §64. Ambipolar Photomagnetoelectric Effect of Kikoin and Noskov.- A. Photomagnetoelectric emf and Short-Circuit Current.- B. Compensation Method for Measuring lD Under Weak Excitation.- C. Use of the Photomagnetoelectric Effect for Determining the Surface Recombination Velocity.- D. Photomagnetoelectric Effect for Any Relationship between the Nonequilibrium Electron and Hole Densities.- §65. Unipolar Transient Photomagnetoelectric Effect.- §66. Negative Photoconductivity in a Magnetic Field.- (ii) Magnetodensity Effects.- §67. Longitudinal Magnetodensity Effect.- §68. Suhl Magnetodensity Effect.- XV Photoelectromotive Forces in Inhomogeneous Semiconductors.- §69. Principle of Operation of p-n Junction Photocells.- A. Energy Model of a p-n Junction.- B. Fundamental Equation of a Photodiode.- §70. Principal Characteristics of p-n Junction Photocells.- A. Current-Voltage Characteristic.- B. Lux-Ampere Characteristic.- C. Photosensitivity Spectrum.- D. Temperature Dependence of the Dark Current, Photocurrent, and Photo-emf.- E. Experimental Verification of the Relationship for Barrier Photo-emf.- §71. Photodiode Kinetics.- A. Photodiode Regime.- B. Barrier Photo-emf Regime.- C. “Hybrid” Regime.- §72. Barrier Photo-emf Kinetics in the Presence of a Load for an Arbitrary Relationship Between ? and R0C.- §73. Influence of Trapping on the Relaxation of Photocurrent in a Photodiode.- §74. Fast-Response Photodiodes.- §75. Optimum Conditions for Using Photodiodes as Detectors of Weak Signals.- §76. Photoelectromotive Forces in the Impurity Excitation Region.- §77. “External” Photoemission from a Metal into a Semiconductor.- §78.Phototransistors.- §79. Photodiode as a Converter of Optical into Electrical Energy.- Literature.

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