Overview

Describing the state of the art on the luminescent properties of porous silicon, this text presents the dramatic results of the major international laboratories and groups working in this subject. The majority of the paticipants agree that a quantum confinement effect and a good passivation of the surface crystallites are responsible for the observed luminescence properties. New characterization techniques are presented as a comprehensive survey of the theoretical models. Both efficient and wavelength tunable electroluminescence are demonstrated using liquid contacts and a cathodic injection system. Localized cathodoluminescence in a scanning electron miscroscope and a scanning tunnelling microscope is also presented. This book demonstrates that a consensus is emerging on the origin of the visible luminescence of highly porous Si. This nanostructure is extending knowledge of this area of solid state physics.

Full Product Details

Author:   B. Bensahel ,  Leigh T. Canham ,  Stephano Ossicini
Publisher:   Springer
Imprint:   Springer
Edition:   1993 ed.
Volume:   244
Dimensions:   Width: 15.50cm , Height: 1.50cm , Length: 23.50cm
Weight:   1.190kg
ISBN:  

9780792324461

ISBN 10:   0792324463
Pages:   239
Publication Date:   31 August 1993
Audience:   Professional and scholarly ,  Professional & Vocational
Format:   Hardback
Publisher's Status:   Active
Availability:   In Print  
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Table of Contents

“Microporous silicon: Formation mechanism and preparation method”.- “Electrochemical and chemical behavior of porous silicon layers: the role of the material wettability and its high specific surface area”.- “Fabrication of silicon nanostructures for light emission study”.- “Light emission from porous silicon and other self organised low dimensional systems”.- “Preparation and properties of thin siloxene films on silicon”.- “Modelling of porous structures formation during electrochemical treatment of materials”.- “Electronic charge trapping effects in porous silicon”.- “Mechanical, optical and electrical properties of porous silicon prepared under clean conditions”.- “The influence of microelectronic processing steps on the properties of porous silicon layers”.- “Progress towards understanding and exploiting the luminescent properties of highly porous silicon”.- ““White”photoluminescence from electrochemically attacked silicon”.- “Electrochemical investigation of the electroluminescent properties of porous silicon”.- “Phenomenological properties of the fast (blue) and slow (red) components in the photoluminescence of porous silicon”.- “Electroluminescence from porous silicon”.- “Optoelectronic properties of porous silicon”.- “Voltage Tunable electroluminescence of porous silicon”.- “Studies of porous silicon by Electron Microscopy”.- “Scanning probe microscopies of luminescent porous silicon layers”.- “In-situ combined infrared and photoluminescence investigation of porous silicon during its etching”.- “Near surface states in Si and their possible role in the luminescence of porous silicon”.- “Porous silicon electroluminescence mechanisms and defect analysis”.- “Defect andstructure analysis of n+ and p+-type porous silicon by the Electron Paramagnetic Resonance technique”.- “Photoluminescence and optically detected magnetic resonance investigations on porous silicon”.- “Effects of the reduction of dielectric constant in nanoscale silicon”.- “Quantum effects in porous-Si ?”.- “Electronic properties of low dimensional silicon structures”.- “Role of silicon molecules and crystallites in the luminescence of porous silicon”.- “Localisation of excitons on a quantum wire of fluctuating width”.

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