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Author:   Jacques I. Pankove
Publisher:   Dover Publications Inc.
Imprint:   Dover Publications Inc.
Edition:   2nd edition
Dimensions:   Width: 13.80cm , Height: 2.10cm , Length: 20.80cm
Weight:   0.471kg
ISBN:  

9780486602752

ISBN 10:   0486602753
Pages:   448
Publication Date:   28 March 2003
Audience:   College/higher education ,  Professional and scholarly ,  Undergraduate ,  Professional & Vocational
Format:   Paperback
Publisher's Status:   Active
Availability:   In Print  
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Table of Contents

"1 ENERGY STATES IN SEMICONDUCTORS 1-A Band Structure 1-A-1 Banding of Atomic Levels 1-A-2 Distribution in Momentum Space 1-A-3 Density-of-States Distribution 1-A-4 Carrier Concentration 1-B Inpurity States 1-C Band Tailing 1-D Excitons 1-D-1 Free Excitons 1-D-2 Excitonic Complexes 1-D-3 Polaritons 1-E Donor-Acceptor Pairs 1-F States in Semiconducting Alloys 2 PERTURBATION OF SEMICONDUCTORS BY EXTERNAL PARAMETERS 2-A Pressure Effects 2-A-1 Hydrostatic Pressure 2-A-2 Uniaxial Strain 2-B Temperature Effects 2-C Electric-Field Effects 2-C-1 Stark Effects 2-C-2 Franz-Keldysh Effect 2-C-3 Ionization Effects 2-D Magnetic-Field Effects 2-D-1 Landau Splitting 2-D-2 Zeeman Effect 3 ABSORPTION 3-A Fundamental Absorption 3-A-1 Allowed Direct Transitions 3-A-2 Forbidden Direct Transitions 3-A-3 Indirect Transitions between Indirect Valleys 3-A-4 Indirect Transitions between Direct Valleys 3-A-5 Transitions between Band Tails 3-A-6 Fundamental Absorption in the Presence of a Strong Electric Field 3-B Higher-energy Transitions 3-C Exciton Absorption 3-C-1 Direct and Indirect Excitons 3-C-2 Exciton Absorption in the Presence of an Electric Field 3-D Absorption due to Isoelectronic Traps 3-E Transitions between a Band and an Impurity Level 3-F Acceptor-to-Donor Transitions 3-G Intraband Transitions 3-G-1 p-Type Semiconductors 3-G-2 n-Type Semiconductors 3-H Free-carrier Absorption 3-I Lattice Absorption 3-J Vibrational Absorption of Impurities 3-K Hot-Electron-Assisted Absorption 4 RELATIONSHIPS BETWEEN OPTICAL CONSTANTS 4-A Absorption Coefficient 4-B Index of Reflection 4-C The Kramers-Kronig Relations 4-D Reflection Coefficient 4-E Determination of Carrier Effective Mass 4-F Plasma Resonance 4-G Transmission 4-H Interference Effects 5 ABSORPTION SPECTROSCOPY 6 RADIATIVE TRANSITIONS 6-A The Van Roosbroeck-Shockley Relation 6-B Radiative Efficiency 6-C The Configuration Diagram 6-D Fundamental Transitions 6-D-1 Exciton Recombination 6-D-2 Conduction-Band-to-Valence-Band Transitions 6-E Transition between a Band and an Impurity Level 6-E-1 Shallow Transitions 6-E-2 Deep Transitions 6-E-3 Transitions to Deep Levels 6-F Donor-Acceptor Transitions 6-F-1 Spectral Structure 6-F-2 Transition Probability 6-F-3 Time Dependence of Donor-to-Acceptor Transitions 6-G Intraband Transition 7 NONRADIATIVE RECOMBINATION 7-A Auger Effect 7-B Surface Recombination 7-C Recombination through Defects or Inclusions 7-D Configuration Diagram 7-E Mulitple-Phonon Emission 8 PROCESSES IN p-n JUNCTIONS 8-A Nature of the p-n Junction 8-A-1 The Depletion Layer 8-A-2 Junction Capacitance 8-A-3 Electric Field in the p-n Junction 8-B Forward-bias Processes 8-B-1 Band-to-Band Tunneling 8-B-2 Photon-Assisted Tunneling 8-B-3 Injection 8-B-4 Tunneling to Deep Levels 8-B-5 Donor-to-Acceptor Photon-Assisted Tunneling 8-B-6 Band Filling 8-B-7 Injection Luminescence in Lightly Doped Junctions 8-B-8 Optical Refrigeration 8-C Heterojunctions 8-D Reverse-Bias Processes 8-D-1 Saturation Current and Photoconductivity 8-D-2 Zener Breakdown 8-D-3 Avalanche Breakdown 9 STIMULATED EMISSION 9-A Relationship between Spontaneous and Stimulated Emission 9-B Criteria for Lasing in a Semiconductor 10 SEMICONDUCTOR LASERS 10-A Cavity and Modes 10-B Waveguiding Properties of the Active Region 10-C Far-Field Pattern 10-D Temperature Dependence 10-D-1 Effect of the Cavity 10-D-2 ""Temperature Dependence of Losses, of Efficiency and of Threshold Current Density"" 10-D-3 Power Dissipation 10-E Optimum Design for Injection Laser 10-F Influence of a Magnetic Field 10-G Pressure Effects 11 EXCITATION OF LUMINESCENCE AND LASING IN SEMICONDUCTORS 11-A Electroluminescence 11-A-1 Forward Biased p-n Junction 11-A-2 Forward-Biased Surface Barrier 11-A-3 Tunneling through an Insulating Layer 11-A-4 Bulk Excitation by Impact Ionization 11-B Optical Excitation 11-C Electron-Beam Excitation 12 PROCESSES INVOLVING COHERENT RADIATION 12-A Photon-Photon Interactions in Semiconductors 12-A-1 Quenching of a Laser by Another Laser 12-A-2 Amplification 12-A-3 Harmonic Generation 12-A-4 Two-photon Absorption 12-A-5 Frequency Mixing 12-B Photon-Phonon Interactions in Semiconductors 12-B-1 Raman Scattering 12-B-2 Brillouin Scattering 12-C Optical Properties of Acoustoelectric Domains 12-C-1 The Acoustoelectric Effect 12-C-2 Light Transmission of Acoustoelectric Domain 12-C-3 Light Emission by Acoustoelectric Domain 12-C-4 Brillouin Scattering Studies of Acoustoelectric Domains 13 PHOTOELECTRIC EMISSION 13-A Threshold for Emission 13-B Photoelectric Yield 13-C Effect of Surface Conditions 13-D Energy Distribution of Emitted Electrons 14 PHOTOVOLATAIC EFFECTS 14-A Photovoltaic Effect at p-n Junctions 14-A-1 Electrical Characteristics 14-A-2 Spectral Characteristics 14-A-3 The Solar Cell 14-B Photovoltaic Effects at Schottky Barriers 14-B-1 The Schottky Barrier 14-B-2 Photo-Effects 14-B-3 Particle Detectors 14-C Bulk Photovoltaic Effects 14-C-1 Dember Effects 14-C-2 Photomagnetoelectric Effect 14-D Anomalous Photovoltaic Effect 14-D-1 Characteristics of Anomalous Photovoltaic Cells 14-D-2 Conditions for Obtaining the Anomalous Photovoltaic Effect 14-D-3 Models for the Anomalaous Photovoltaic Effect 14-D-4 Angular Dependence of Photovoltaic Effects 14-E Other Photovoltaic Effects 14-E-1 Lateral Photoeffect 14-E-2 Optically Induced Barriers 14-E-3 Photovoltaic Effect at a Graded Energy Gap 15 POLARIZATION EFFECTS 15-A Birefringence 15-A-1 Birefringence in Uniaxial Crystals 15-A-2 Elliptical Polarization 15-A-3 Birefringence in Biaxial Crystals 15-B Induced Optical Anisotropy 15-B-1 Electro-Optic Kerr Effect 15-B-2 Pockets Effect or Linear Electro-Optic Effect 15-B-3 Faraday Effect   17-E-4 Temperature Dependence of Trapping in GaAs Injection Lasers 17-E-5 Double-Acceptor Model 17-E-6 Internal Q-Switching 17-F Triboluminescence 17-F-1 Strain-Excited Luminescence 17-F-2 Strain-Stimulated Luminescence 17-F-3 Fracture Luminescence 18 REFLECTANCE MODULATION 18-A Dependence of Reflectance on the Band Structure 18-B Reflectance-modulation Techniques 18-B-1 Electroreflectance 18-B-2 Optical Modulation of Reflectance 18-B-3 Cathodoreflectance Modulation 18-B-4 Piezoreflectance Modulation 18-B-5 Thermoreflectance Modulation 18-B-6 Wavelength Modulation 18-C Some Results APPENDICES I Table of Contents II Properties of Semiconductors III Nomograph of the Temperature Dependence of the Fermi Level in a Degenerate Parabolic Band IV Physical Constants INDEX"

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