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OverviewThis book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits. Full Product DetailsAuthor: Yue Hao (Xidian University, Xi'an, PR of China) , Jin Feng Zhang (Xidian University, Xi'an, PR of China) , Jin Cheng Zhang (Xidian University, Xi'an, PR of China)Publisher: Taylor & Francis Inc Imprint: CRC Press Inc Weight: 0.884kg ISBN: 9781498745123ISBN 10: 1498745121 Pages: 392 Publication Date: 03 October 2016 Audience: College/higher education , Professional and scholarly , Postgraduate, Research & Scholarly , Professional & Vocational Format: Hardback Publisher's Status: Active Availability: In Print  This item will be ordered in for you from one of our suppliers. Upon receipt, we will promptly dispatch it out to you. For in store availability, please contact us. Table of ContentsReviewsAuthor InformationYue Hao, Jin Feng Zhang, and Jin Cheng Zhang are affiliated with Xidian University, China. Tab Content 6Author Website:Countries AvailableAll regions |
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