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OverviewFull Product DetailsAuthor: Pierre Ruterana , Martin Albrecht , Jorg NeugebauerPublisher: Wiley-VCH Verlag GmbH Imprint: Wiley-VCH Verlag GmbH Dimensions: Width: 18.60cm , Height: 3.90cm , Length: 24.60cm Weight: 1.478kg ISBN: 9783527403875ISBN 10: 3527403876 Pages: 686 Publication Date: 08 April 2003 Audience: Professional and scholarly , Professional & Vocational Format: Hardback Publisher's Status: Out of Print Availability: Awaiting stock  Table of ContentsPreface.List of Contributors.PART 1: MATERIAL.1. High-Pressure Crystallization of GaN (I. Grzegory, et al.).2. Epitaxial Lateral Overgrowth of GaN (P. Gibart, et al.).3. Plasma-Assisted Molecular Beam Epitaxy of III-V Nitrides (A. Georgakilas, et al.).4. Growth of Gallium Nitride by Hydride Vapor Phase Epitaxy (A. Trassoudaine, et al.).5. Growth and Properties of InN (V. Davydov, et al.).6. Surface Structure and Adatom Kinetics of Group-III Nitrides (J. Neugebauer).PART 2: DEFECTS AND INTERFACES.7. Topological Analysis of Defects in Nitride Semiconductors (G. Dimitrakopulos, et al.).8. Extended Defects in Wurtzite GaN Layers: Atomic Structure, Formation, and Interaction Mechanisms (P. Ruterana, et al.).9. Stain, Chemical Composition, and Defects Analysis at Atomic Level in GaN-based Epitaxial Layers (S. Kret, et al.).PART 3: PROCESSING AND DEVICES.10. Ohmic Contacts to GaN (P. Hartlieb, et al.). 11. Electroluminescent Diodes and Laser Diodes (H. Amano).12. GaN-Based Modulation-Doped FETs and Heterojunction Bipolar Transistors ( H. Morkoc & L. Liu).13. GaN-Based UV Photodetectors (F. Omnes & E. Monroy).Subject Index.ReviewsWhat is different about this book from others on the same topic is that this handbook collects review articles and provides a systematic overview of the topic. It brings the latest insight into the fundamental issues with specific emphasis on growth, defect structure, and industrial applications. ( E-Streams , Vol. 7, No. 5) Author InformationIsabella Grzegory, High Pressure Research Center, Poland Pierre Gibart, CRHEA-CNRS, France A. Georgakilas, Microelectronics Research Group, Greece Agnes Trassoudaine, Universite Blaise Pascal, France V. Yu. Davydov, Polytekhnicheskaya, Russia Jorg Neugebauer, Fritz-Haber-Institut der MPG, Germany Ph. Komninou, Aristotle University of Thessaloniki, Greece Pierre Ruterana, ESCTM-CRISMAT, France P. J. Hartlieb, North Carolina State University, Raleigh, USA H. Amano, Meijo University, Japan Hadis Morkoc, Virginia Commonwealth University, USA Franck Omnes, CRHEA/CNRS, France Tab Content 6Author Website:Countries AvailableAll regions |
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