Overview

This study discusses MOS transistor models and their parameters required for VLSI simulation of MOS-integrated circuits. It gives detailed presentation of model parameter determination for MOS models. Various models are developed ranging from simple to more sophisticated models that take into account new physical effects observed in submicron devices used in today's MOS VLSI technology. The assumptions used to arrive at the models are emphasized so that the accuracy of the model in describing the device characteristics are clearly understood. Understanding these models is essential when designing circuits for the state-of-the-art MOS ICs. Since threshold voltage is the single-most important MOSFET parameter, a full chapter is devoted to the development of the device threshold voltage model. Due to the importance of designing reliable circuits, the device reliability models, as applied for circuit simulations, are also covered. Since the device parameters vary due to inherent processing variations, how to arrive at worst-case design parameters are also covered. Presentation of the material is such that even an undergraduate student, not well familiar with semiconductor device physics, can understand the intricacies of MOSFET modeling. The book serves as a technical source in the area of MOSFET modeling for state-of-the-art MOSFET technology for both practicing device and circuit engineers, and engineering students interested in the area.

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9783211823958

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