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OverviewFull Product DetailsAuthor: Max G Lagally (Univ Of Wisconsin-madison, Usa) , Zhenyu Zhang (Oak Ridge Nat'l Lab, Usa)Publisher: World Scientific Publishing Co Pte Ltd Imprint: World Scientific Publishing Co Pte Ltd Volume: 14 ISBN: 9789810234713ISBN 10: 9810234716 Pages: 508 Publication Date: 02 February 1999 Audience: College/higher education , Professional and scholarly , Postgraduate, Research & Scholarly , Professional & Vocational Format: Hardback Publisher's Status: Active Availability: Out of stock  The supplier is temporarily out of stock of this item. It will be ordered for you on backorder and shipped when it becomes available. Table of ContentsTheoretical basis - study of strain and temperature dependence of metal epitaxy, C. Ratsch et al; atomistic simulation methods, A.F. Voter; submonolayer nucleation and growth of 2D islands and multilayer mound formation during homoepitaxy, J.W. Evans and M.C. Bartelt; equilibrium shape of a coherent epitaxial cluster, C. Duport et al; dynamic scaling in epitaxial growth, S. Das Sarma; scaling and crossovers in models for thin film growth, A Pimpinelli et al; quantum effect in meta overlayers on semiconductor substrates, J.-H. Cho et al; semiconductor-on-semiconductor growth - self-organized island arrays in SiGe/Si multilayers, C. Teichert et al; morphological evolution of strained semiconductor films, D.E. Jesson; large scale surface evolution during MBE growth - mounding, C. Orme et al; growth structures of silicon homoepitaxy by chemical vapour deposition, H. Rauscher and R.J. Behm; metal-on-metal growth - two-dimensional island shapes, T. Michely and G. Comsa; ramified growth in metal on metal epitaxy, R.Q. Hwang; morphology and energy barriers in homoepitaxial growth and coarsening - a case study for Cu(100), J.F. Wendelken et al; the concept of two mobilities for growth manipulation, G. Rosenfeld et al; tailoring epitaxial growth of low-dimensional magnetic heterostructures by means of surfactants, J.J. de Miguel et al; cluster diffusion, coalescence and coarsening in metal(100) homoepitaxial systems, P.A. Thiel and J.W. Evans; metal-on-semiconductor growth - Ag on Si-surfaces -from insulator to metal, M.H. von Hoegen et al; metal on semiconductor growth at low temperatures, M.C. Tringides; growing atomically flat metal films on semiconductor substrates, C.-K. Shih; removal - spontaneous halogen etching of Si, J.H. Weaver and C.M. Aldao; surface morphology of ion bombarded Si(001) and Ge(001) surfaces, H.J.W. Zandvliet and I.S.T. Tsong.ReviewsAuthor InformationTab Content 6Author Website:Countries AvailableAll regions |
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