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OverviewFull Product DetailsAuthor: Farzan Jazaeri (École Polytechnique Fédérale de Lausanne) , Jean-Michel Sallese (École Polytechnique Fédérale de Lausanne)Publisher: Cambridge University Press Imprint: Cambridge University Press Dimensions: Width: 17.80cm , Height: 1.50cm , Length: 25.40cm Weight: 0.640kg ISBN: 9781107162044ISBN 10: 1107162041 Pages: 252 Publication Date: 01 March 2018 Audience: College/higher education , Undergraduate , Postgraduate, Research & Scholarly Format: Hardback Publisher's Status: Active Availability: In stock  We have confirmation that this item is in stock with the supplier. It will be ordered in for you and dispatched immediately. Table of Contents1. Introduction; 2. Review on modeling junctionless FETs; 3. The EPFL charge-based model of junctionless field-effect transistors; 4. Model driven design – space of junctionless FETs; 5. Generalization of the charge based model: accounting for inversion layers; 6. Predicted performances of junctionless FETs; 7. Short channel effects in symmetric junctionless double-gate FETs; 8. Modeling AC operation in symmetric double-gate and nanowire JL FETs; 9. Modeling asymmetric operation of double-gate junctionless FETs; 10. Modeling noise behavior in junctionless FETs; 11. Carrier mobility extraction methodology in JL and inversion mode FETs; 12. Revisiting the Junction FET: a junctionless FET with an ∞ gate capacitance; 13. Modeling junctionless FET with interface traps targeting biosensor applications; Appendix A. Design – space of twin gate junctionless vertical slit FETs; Appendix B. Transient off-current in junctionless FETs; Appendix C. Derivatives of mobile charge density with respect to VGS and VDS; Appendix D. Global charge density at drain in depletion mode; Appendix E. Global charge density at drain in accumulation mode; Appendix F. The EPFL Junctionless MODEL ver.1.0.ReviewsAuthor InformationFarzan Jazaeri is a Scientist at the Ecole Polytechnique Fédérale de Lausanne where his research interests focus on semiconductor devices and physics, and particularly the modeling and fabrication of field-effect transistors. Jean-Michel Sallese is a Senior Scientist at the Ecole Polytechnique Fédérale de Lausanne. He specialises in the analytical modeling of bulk and multigate field-effect transistors. Tab Content 6Author Website:Countries AvailableAll regions |
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