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OverviewFull Product DetailsAuthor: Francis F. Chen , Jane P. ChangPublisher: Springer Science+Business Media Imprint: Kluwer Academic/Plenum Publishers Edition: 2003 ed. Dimensions: Width: 21.00cm , Height: 1.20cm , Length: 27.90cm Weight: 1.140kg ISBN: 9780306474972ISBN 10: 0306474972 Pages: 208 Publication Date: 31 January 2003 Audience: College/higher education , Professional and scholarly , Undergraduate , Postgraduate, Research & Scholarly Format: Paperback Publisher's Status: Active Availability: In Print  This item will be ordered in for you from one of our suppliers. Upon receipt, we will promptly dispatch it out to you. For in store availability, please contact us. Table of ContentsPreface. Plasma Physics. Part A1: Introduction to Plasma Science. I. What is plasma? II.Plasma fundamentals. Part A2: Introduction to Gas Discharges. III. Gas discharge fundamentals. Part A3: Plasma Sources I. IV. Introduction to plasma sources. Part A4: Plasma Sources II. V. RIE discharges. Plasma Chemistry. Part A5: Plasma Sources III. VI. ECR sources. Part A6: Plasma Sources IV. VIII. Helicon wave sources and HDPs. IX. Discharge equilibrium. Part A7: Plasma Diagnostics. X. Introduction. XI. Remote diagnostics. Langmuir probes. XIII. Other local diagnostics. Part B1: Overview of Plasma Processing in Microelectronics Fabrication. I. Plasma processing. II. Applications in microelectronics. Part B2: Kinetic Theory and Collisions. I. Kinetic theory. II. Practical gas kinetic models and macroscopic properties. III. Collision dynamics. Part B3: Atomic Collisions and Spectra. I. Atomic energy levels. II. Atomic collisions. IV. Inelastic collisions. Part B4: Molecular Collisions and Spectra. I. Molecular energy levels. II. Selection rule for optimal emission of molecules. IV Heavy particle collisions. V. Gas phase kinetics. Part B5: Plasma Diagnostics. I. Optical emission spectography. II. Laser induced fluorescence. III. Laser Interferometry. IV. Full-wafer interferometry. V. Mass spectrometry. Part B6: Plasma Surface Kinetics. I. Plasma chemistry. II. Surface reactions. III. Loading. IV. Selectivity. V. Detailed reaction modeling. Part B7: Feature Evolution and Modeling. I. Fundamentals of feature evolution in plasma etching. II. Predictive modeling. III. Mechanisms of profile evolution. IV. Profile simulation. V. Plasma damage. Epilogue: Current Problems in Semiconductor Processing. I. Front-end challenges. II. Back-end challenges. III. Patterning nanometer features. IV. Deep reactive etch for MEMS. V. Plasma-induced damage. VI. Species control in plasma reactors.ReviewsAuthor InformationTab Content 6Author Website:Countries AvailableAll regions |
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