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OverviewAccurate positioning of self-organized nanostructures on a substrate surface can be regarded as the Achilles’ heel of nanotechnology. This perception also applies to self-assembled semiconductor quantum dots. This book describes the full range of possible strategies to laterally align self-assembled quantum dots on a substrate surface, starting from pure self-ordering mechanisms and culminating with forced alignment by lithographic positioning. The text addresses both short- and long-range ordering phenomena and paves the way for the future high integration of single quantum dot devices on a single chip. Contributions by the best-known experts in this field ensure that all relevant quantum-dot heterostructures are elucidated from diverse perspectives. Full Product DetailsAuthor: Oliver G. SchmidtPublisher: Springer-Verlag Berlin and Heidelberg GmbH & Co. KG Imprint: Springer-Verlag Berlin and Heidelberg GmbH & Co. K Edition: Softcover reprint of hardcover 1st ed. 2007 Dimensions: Width: 15.50cm , Height: 3.60cm , Length: 23.50cm Weight: 1.092kg ISBN: 9783642079917ISBN 10: 3642079911 Pages: 707 Publication Date: 25 November 2010 Audience: Professional and scholarly , Professional & Vocational Format: Paperback Publisher's Status: Active Availability: Out of print, replaced by POD  We will order this item for you from a manufatured on demand supplier. Table of ContentsLateral Self-Alignment.- Physical Mechanisms of Self-Organized Formation of Quantum Dots.- Routes Toward Lateral Self-Organization of Quantum Dots: the Model System SiGe on Si(001).- Short-Range Lateral Ordering of GeSi Quantum Dots Due to Elastic Interactions.- Hierarchical Self-Assembly of Lateral Quantum-Dot Molecules Around Nanoholes.- Energetics and Kinetics of Self-Organized Structure Formation in Solution Growth – the SiGe/Si System.- Ge Quantum Dot Self-Alignment on Vicinal Substrates.- Lateral Arrangement of Ge Self-Assembled Quantum Dots on a Partially Relaxed SixGe1?x Buffer Layer.- Ordering of Wires and Self-Assembled Dots on Vicinal Si and GaAs (110) Cleavage Planes.- Stacking and Ordering in Self-Organized Quantum Dot Multilayer Structures.- Self-Organized Anisotropic Strain Engineering for Lateral Quantum Dot Ordering.- Towards Quantum Dot Crystals via Multilayer Stacking on Different Indexed Surfaces.- Forced Alignment.- One-, Two-, and Three-Dimensionally Ordered GeSi Islands Grown on Prepatterned Si (001) Substrates.- Ordered SiGe Island Arrays: Long Range Material Distribution and Possible Device Applications.- Nanoscale Lateral Control of Ge Quantum Dot Nucleation Sites on Si(001) Using Focused Ion Beam Implantation.- Ge Nanodroplets Self-Assembly on Focused Ion Beam Patterned Substrates.- Metallization and Oxidation Templating of Surfaces for Directed Island Assembly.- Site Control and Selective-Area Growth Techniques of In As Quantum Dots with High Density and High Uniformity.- In(Ga)As Quantum Dot Crystals on Patterned GaAs(001) Substrates.- Directed Arrangement of Ge Quantum Dots on Si Mesas by Selective Epitaxial Growth.- Directed Self-Assembly of Quantum Dots by Local-Chemical-Potential Control via Strain Engineering on PatternedSubstrates.- Structural and Luminescence Properties of Ordered Ge Islands on Patterned Substrates.- Formation of Si and Ge Nanostructures at Given Positions by Using Surface Microscopy and Ultrathin SiO2 Film Technology.- Pyramidal Quantum Dots Grown by Organometallic Chemical Vapor Deposition on Patterned Substrates.- Large-Scale Integration of Quantum Dot Devices on MBE-Based Quantum Wire Networks.- GaAs and InGaAs Position-Controlled Quantum Dots Fabricated by Selective-Area Metalloorganic Vapor Phase Epitaxy.- Spatial InAs Quantum Dot Positioning in GaAs Microdisk and Posts.ReviewsAuthor InformationThe author was awarded the Philip-Morris Research Award in 2002. Tab Content 6Author Website:Countries AvailableAll regions |
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