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OverviewFull Product DetailsAuthor: Emanuele RiminiPublisher: Springer Imprint: Springer Edition: 1995 ed. Volume: 293 Dimensions: Width: 15.50cm , Height: 2.30cm , Length: 23.50cm Weight: 1.660kg ISBN: 9780792395201ISBN 10: 0792395204 Pages: 393 Publication Date: 31 December 1994 Audience: College/higher education , Professional and scholarly , Postgraduate, Research & Scholarly , Professional & Vocational Format: Hardback Publisher's Status: Active Availability: In Print This item will be ordered in for you from one of our suppliers. Upon receipt, we will promptly dispatch it out to you. For in store availability, please contact us. Table of Contents1 Semiconductor Devices.- 1.1 Introduction.- 1.2 Semiconductor Physics.- 1.3 p-n Junction and Diode.- 1.4 Unipolar and Bipolar Transistors.- 1.5 Ion Implantation and Semiconductor Devices.- 1.6 Damage and Yield.- 1.7 Future Trend.- 2 Ion Implanters.- 2.1 Introduction.- 2.2 Ion Sources.- 2.3 High Energy Implanters.- 2.4 Magnetic Analyzer and Beam Transport.- 2.5 Energy Contamination.- 2.6 Scan System and Current Measurement.- 2.7 Wafer Cooling.- 2.8 Wafer Charging.- 2.9 Uniformity Control and Mapping.- 2.10 Contaminants and Yield.- 2.11 Plasma Immersion Ion Implantation.- 3 Range Distribution.- 3.1 Introduction.- 3.2 Elastic Stopping Power.- 3.3 Electronic Energy Loss.- 3.4 Depth Profile of Implanted Ions.- 3.5 Penetration Anomalies.- 3.6 Channeling Implants.- 3.7 Lateral Spreading.- 3.8 Simulation of Range Distribution.- 4 Radiation Damage.- 4.1 Introduction.- 4.2 Collision Cascade.- 4.3 Damage Distribution.- 4.4 Crystalline Defects.- 4.5 Primary Defects.- 4.6 Hot Implants.- 4.7 Ion Beam Induced Enhanced Crystallization.- 4.8 Ion Implantation into Localized Si Areas.- 5 Annealing and Secondary Defects.- 5.1 Introduction.- 5.2 Solid Phase Epitaxial Growth of Amorphous Silicon.- 5.3 Annealing of Low-Dose Heavy - Ion Implant.- 5.4 Regrowth of Amorphous Layer Under a Mask.- 5.5 Annealing of Heavily Disordered Regions.- 5.6 Rapid Thermal Processing.- 5.7 Impurity Diffusion During Annealing.- 5.8 Interaction of Impurities with Ion Implanted Defects.- 5.9 Defect Engineering.- 6 Analytical Techniques.- 6.1 Introduction.- 6.2 Secondary Ion Mass Spectrometry.- 6.3 Spreading Resistance Profilometry: One and Two Dimensional Analyses.- 6.4 Carrier and Mobility Profiles.- 6.5 Rutherford Backscattering and Channeling Effect.- 6.6 Transmission Electron Microscopy.- 7 Silicon Based Devices.- 7.1 Introduction.- 7.2 Threshold Voltage Control in MOSFET.- 7.3 Short Channel Effects.- 7.4 Shallow Junctions.- 7.5 Complementary MOS Devices and Technology.- 7.6 Lifetime Engineering in Power Devices.- 7.7 High Energy Implant Applications.- 7.8 High-Speed Bipolar Transistors.- 8 Ion Implantation in Compound Semi-Conductor and Buried Layer Synthesis.- 8.1 Introduction.- 8.2 Ion Implantation in GaAs.- 8.3 Ion Implantation in InP.- 8.4 Isolation of III-V Semiconductors.- 8.5 Isolation of Superlattice and Quantum Well Structures.- 8.6 Synthesis of Buried Dielectric.- 8.7 Devices in SOI Substrates.- 8.8 Buried Metal Layer Formation.- 8.9 Compound Semiconductor Based Devices.- Selected References.- References.ReviewsAuthor InformationTab Content 6Author Website:Countries AvailableAll regions |