Free Delivery Over $100
|
|
|||
|
||||
OverviewGallium nitride and its alloys have recently emerged as important semiconductor materials with application to yellow, green, blue and ultraviolet portions of the spectrum as emitters, detectors and high temerature electronics. LEDs based on wide badgap GaN nitrides exhibit excellent longevity and brightness levels. Combined with red LEDs one can, for the first time, have full colour semiconductor displays. The symposium from 16-20 June 1997 in Strasbourg, France provided a forum for active nitride researchers covering the most recent developments in all areas of nitride semiconductors. Sessions focused on the aspects of epitaxial and bulk growth of GaN and its alloys, on optical properties and structural and electrical characterisation, quantum phenomena and light emitting devices such as LEDs and laser diodes. Full Product DetailsAuthor: B.K. Meyer (I. Phusikalisches Institut, Justus Liebig University of Giessen, Heinrich Buff Ring 16, D-35392 Giessen, Germany;)Publisher: Elsevier Science & Technology Imprint: Elsevier Science Ltd Volume: v. 74 Dimensions: Width: 21.00cm , Height: 1.90cm , Length: 27.90cm Weight: 0.960kg ISBN: 9780444205186ISBN 10: 0444205187 Pages: 330 Publication Date: 22 July 1998 Audience: Professional and scholarly , Professional & Vocational Format: Hardback Publisher's Status: Active Availability: Out of stock  The supplier is temporarily out of stock of this item. It will be ordered for you on backorder and shipped when it becomes available. Table of ContentsChapter headings and selected papers: Preface. GaN Growth. Efficient and uniform production of III-nitride films by multiwafer MOVPE (M. Deschler et al.). Plasma assisted molecular beam epitaxy growth of GaN (S. Einfeldt et al.). GaN thin films deposited by pulsed laser ablation in nitrogen and ammonia reactive atmospheres (D. Cole et al.). Electronic, Structural Properties and Characterisation. Characterization of AIN buffer layers on (0001)-sapphire substrates (Y.M. Le Vaillant et al.). Zinc-blende GaN: ab initio calculations (J.L.A. Alves et al.). The structure of GaN layers grown on SiC and sapphire by molecular beam epitaxy (P. Ruterana et al.). Transmission electron microscopy characterisation of metalorganic chemical vapour deposition grown GaN layers (B. Pécz et al.). Optical Properties of GaN. Characterization of Ca and C implanted GaN (B. Mensching et al.). Optical and magneto-optical characterization of heteroepitaxial gallium nitride (B.J. Skromme). Optical characterization of MBE-grown GaNs (G. Pozina et al.). Photoluminescence properties of nanocrystalline AIN layers grown by pulse plasma assisted CVD (A. Olszyna et al.). Quantum Phenomena. Nanosecond pump-and-probe study of wurtzite GaN (T. Deguchi et al.). Two-photon spectroscopy in GaN (M. Steube et al.). Quantum beat spectroscopy on excitons in GaN (R. Zimmermann et al.). Nitride Alloys: AlGaN, InGaN and GaAsN. Properties and applications of MBE grown AlGaN (M. Stutzmann et al.). Comparative study of hexagonal and cubic GaN growth by RF-MBE (G. Feuillet et al.). Nitride Devices and Device Modelling. RT-CW operation of InGaN multi-quantum-well structure laser diodes (S. Nakamura). Electrical and optical properties of p-SiC/n-GaN heterostructures (M. Topf et al.).ReviewsAuthor InformationTab Content 6Author Website:Countries AvailableAll regions |
||||
