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OverviewFull Product DetailsAuthor: Tingkai Li , Michael Mastro , Armin DadgarPublisher: Taylor & Francis Inc Imprint: CRC Press Inc Dimensions: Width: 15.60cm , Height: 3.30cm , Length: 23.40cm Weight: 0.952kg ISBN: 9781439815229ISBN 10: 1439815224 Pages: 604 Publication Date: 02 December 2010 Audience: Professional and scholarly , Professional & Vocational Format: Hardback Publisher's Status: Active Availability: In Print  This item will be ordered in for you from one of our suppliers. Upon receipt, we will promptly dispatch it out to you. For in store availability, please contact us. Table of ContentsPart I: Basic Physical and Chemical Properties Fundamentals and the Future of Semiconductor Device Technology. The Challenge of III–V Materials Integration with Si Microelectronics. Part II: GaN and Related Alloys on Silicon Growth and Integration Techniques III-Nitrides on Si Substrate. New Technology Approaches. Part III: III–V Materials and Device Integration Processes with Si Microelectronics Group III-A Nitrides on Si: Stress and Microstructural Evolution. Direct Growth of III–V Devices on Silicon. Optoelectronic Device Integrated on Si. Reliability of III–V Electronic Devices. Part IV: Defect and Properties Evaluation and Characterization In Situ Curvature Measurements, Strains, and Stresses in the Case of Large Wafer Bending and Multilayer Systems. X-Ray Characterization of Group III-Nitrides. Luminescence in GaN. Part V: Device Structures and Properties GaN-Based Optical Devices on Silicon. The Conventional III–V Materials and Devices on Silicon III–V Solar Cells on Silicon.ReviewsAuthor InformationTingkai Li, Ph.D., is currently working at Micron Technology, Inc. as a senior technical member. He published over 100 technical papers, edited three preceding books, and was granted 93 US patents and many awards related in semiconductor and compound semiconductor device and materials research. He is an invited paper reviewer of the Applied Physics Letter, Journal of Applied Physics, IEEE Electron Device Letter, IEEE Transaction of Electron Device, etc., and overseas editor of Journal of Inorganic Materials. He is also honorary professor at Hunan University, Wuhan University of Technologies, and Zhejiang University in China. Dr. Li received a Ph.D. degree in Materials Science and Engineering from Zhejiang University, P. R. China, in 1987, and was a postdoctoral fellow and research scientist at Virginia Polytechnic Institute and State University, Blacksburg, Virginia from 1989-1995. From 1995-1998, he worked as a Staff Scientist in EMCORE Cooperation, New Jersey. He joined Sharp Laboratories in 1998 as a principal member of technical staff and project manager. Michael Mastro, currently a civilian staff scientist at the U.S. Naval Research Lab, has more than 10 years of research experience in thin film growth and characterization, as well as semiconductor device design and nano-fabrication. This includes a number of fundamental advances in the fabrication of planar LEDs and high-power electronic devices, in addition to the development of novel nano-devices, which has resulted in authorship on more than 100 papers and patents. Michael earned a Ph.D. from the University of Florida in 2001 and a B.S. in Chemical Engineering from the Johns Hopkins University in 1997. Armin Dadgar studied physics at University of Heidelberg and at TU-Berlin, where he received his doctor of natural sciences in 1999, successfully developing an alternative method to Fe doping to obtain semiinsulating InP by using Ru. Since 1999 has worked at the Otto-von-Guericke-Universitaet Magdeburg in the group of Prof. Alois Krost and is private lecturer since 2005. There he developed methods to grow thick crack-free GaN on Si by MOVPE in 2000 and demonstrated the first thick crack-free GaN LED grown by a patterning method in 2001 followed by the first thick crack-free LED on planar silicon substrate shortly after. In 2003 he co-founded AZZURRO Semiconductors AG and held the CTO position until he left the company in 2009. During his time at AZZURRO he demonstrated the first GaN-on-Silicon on 150 mm substrates in 2005, high voltage GaN on Si FETs up to 1800 V breakdown voltage and successfully transferred an LED buffer growth process to OSRAM Opto Semiconductors in 2008/2009. He is author of more than 150 papers, co-inventor of more than 30 patents or patent applications in the field of semiconductors, and received several national awards for his pioneering work on GaN-on-Silicon. Tab Content 6Author Website:Countries AvailableAll regions |
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