Overview

This book is dedicated to GaN and its alloys AlGaInN (III-V nitrides), semiconductors with intrinsic properties well suited for visible and UV light emission and electronic devices working at high temperature, high frequency, and harsh environments. There has been a rapid growth in the industrial activity relating to GaN, with GaN now ranking at the second position (after Si) among all semiconductors. This is mainly thanks to LEDs, but also to the emergence of lasers and high power and high frequency electronics. GaN-related research activities are also diversifying, ranging from advanced optical sources and single electron devices to physical, chemical, and biological sensors, optical detectors, and energy converters. All recent developments of nitrides and of their technology are gathered here in a single volume, with chapters written by world leaders in the field. This third book of the series edited by B. Gil is complementary to the preceding two, and is expected to offer a modern vision of nitrides and of their devices to a large audience of readers.

Full Product Details

Author:   Bernard Gil (Director of Research at CNRS, University of Montpellier 2)
Publisher:   Oxford University Press
Imprint:   Oxford University Press
Volume:   18
Dimensions:   Width: 16.60cm , Height: 3.90cm , Length: 23.40cm
Weight:   1.288kg
ISBN:  

9780199681723

ISBN 10:   0199681724
Pages:   662
Publication Date:   22 August 2013
Audience:   Professional and scholarly ,  Professional & Vocational
Format:   Hardback
Publisher's Status:   Active
Availability:   To order  
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Table of Contents

1: Hiroshi Amano: Development of the nitride-based UV/DUV LEDs 2: Izabella Grzegory, Michal Bockowski, Piotr Perlin, Czeslaw Skierbiszewski, Tadeusz Suski, Marcin Sarzynski, Stanislaw Krukowski, and Sylwester Porowski: The homoepitaxial challenge: GaN crystals grown at high pressure for laser diodes and laser diode arrays 3: Armin Dadgar and Alois Krost: Epitaxial growth and benefits of GaN on silicon 4: Ronny Kirste and Zlatko Sitar: The growth of bulk aluminum nitride 5: Andre Strittmatter: Epitaxial growth of nitride quantum dots 6: Raphael Butte, Gatien Cosendey, Lorenzo Lugani, Marlene Glauser, Antonino Castiglia, Guillaume Perillat-Merceroz, Jean-Francois Carlin, and Nicolas Grandjean: Properties of InAlN layers nearly lattice-matched to GaN and their use for photonics and electronics 7: Hideto Miyake: Growth and optical properties of aluminum rich AlGaN heterostructures 8: Michael Kneissl and Tim Wernicke: Optical and structural properties of InGaN light emitters on non- and semipolar GaN 9: Rudeesun Songmuang and Eva Monroy: GaN-based single-nanowire devices 10: Jean Yves Duboz: Advanced photonic and nanophotonic devices 11: Yvon Cordier, Tatsuya Fujishima, Bin Lu, Elison Matioli, and Tomas Palacios: Nitride-based electron devices for high power / high frequency applications 12: Maria Tchernycheva and Francois Julien: Intersubband transitions in low dimensional nitrides 13: Tatiana V. Shubina, Mikhail M. Glazov, Nikolay A. Gippius, and Bernard Gil: The slow light in gallium nitride 14: Csilla Gergely: Nitride devices and their biofunctionalization for biosensing applications 15: Walter R. L. Lambrecht and Atchara Punya: Heterovalent ternary II-IV-N2 compounds: perspectives for a new class of wide-band-gap nitrides 16: O. Kyriienko, I.A. Shelykh, and Alexey V. Kavokin: Terahertz emission in polaritonic systems with nitrides

Reviews

<br> This book, written by a team of worldwide experts in the field, deals with nitride based materials in 16 chapters. It covers growth and material aspects of nitrides, nano-devices, photonics, advanced transistors, slow light production, and terahertz emission. Emphasis is put on directions of aluminum rich nitrides for UV operation and utilization of silicon substrates. <br>-- Gerald Bastard, Ecole Normale Superieure <br><p><br>

`This book, written by a team of worldwide experts in the field, deals with nitride based materials in 16 chapters. It covers growth and material aspects of nitrides, nano-devices, photonics, advanced transistors, slow light production, and terahertz emission. Emphasis is put on directions of aluminum rich nitrides for UV operation and utilization of silicon substrates.' Gerald Bastard, Ecole Normale Supérieure

Author Information

Bernard Gil was hired at CNRS in 1982 as an Associate Researcher, before being appointed Director of Research in 1995. He was granted the degree of Doctor Honoris Causa from the University of Saint Petersburg in July 2012. He is currently directing the Institute of Physics at Montpellier.

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