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Author:   Stephen J. Pearton ,  H.-J. Queisser ,  James W. Corbett ,  Michael Stavola
Publisher:   Springer-Verlag Berlin and Heidelberg GmbH & Co. KG
Imprint:   Springer-Verlag Berlin and Heidelberg GmbH & Co. K
Edition:   Softcover reprint of the original 1st ed. 1992
Volume:   16
Dimensions:   Width: 15.50cm , Height: 2.00cm , Length: 23.50cm
Weight:   0.575kg
ISBN:  

9783540554912

ISBN 10:   3540554912
Pages:   363
Publication Date:   29 June 1992
Audience:   Professional and scholarly ,  Professional & Vocational
Format:   Paperback
Publisher's Status:   Active
Availability:   Out of stock  
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Table of Contents

1. Introduction.- 2. Hydrogen Incorporation in Crystalline Semiconductors.- 2.1 Techniques for Hydrogen Incorporation in Semiconductors.- 2.2 Survey of the Configurations of Hydrogen in Semiconductors.- 3. Passivation of Deep Levels by Hydrogen.- 3.1 Deep-Level Passivation in Silicon.- 3.2 Passivation of Defects in Gallium Arsenide.- 3.3 Aluminum Gallium Arsenide.- 3.4 Gallium Phosphide.- 3.5 CdHgTe, Zn3P2.- 3.6 Germanium.- 4. Shallow Impurity Passivation by Atomic Hydrogen.- 4.1 Silicon.- 4.2 Gallium Arsenide.- 4.3 AlGaAs.- 4.4 CdTe and ZnTe.- 4.5 Gallium Phosphide.- 4.6 Germanium.- 4.7 Indium Phosphide.- 4.8 BN and BP.- 4.9 Correlation with Muonium.- 5. Microscopic Properties of Hydrogen-Related Complexes in Silicon from Vibrational Spectroscopy.- 5.1 Vibrational Spectroscopy of H-Related Complexes.- 5.2 Uniaxial Stress Studies of H-Related Complexes.- 5.3 Hydrogen Motion in the B-H Complex.- 5.4 Conclusion.- 6. The Microscopic Characteristics of Impurity-Hydrogen Complexes in III-V Semiconductors.- 6.1 Acceptor-H Complexes.- 6.2 Donor-H Complexes.- 6.3 Unintentional Hydrogenation.- 6.4 Uniaxial Stress Studies.- 6.5 Cluster Calculations for H-Related Complexes in GaAs.- 6.6 Conclusion.- 7. Hydrogen, and Semiconductor Surfaces and Surface Layers.- 7.1 Etching of Silicon Surfaces by Hydrogen.- 7.2 Plasma Etching.- 7.3 Implantation of Protons.- 7.4 Hydrogen on Semiconductor Surfaces.- 8. Hydrogen-Related Defects in Semiconductors.- 8.1 Hydrogen-Related Defects in Silicon.- 8.2 Hydrogen-Related Defects in Germanium.- 8.3 Hydrogen-Related Defects in Compound Semiconductors.- 8.4 Hydrogen-Related IR Bands in Silicon.- 9. Diffusion of Hydrogen in Semiconductors.- 9.1 Diffusion of Hydrogen in Solids.- 9.2 Diffusion Equations.- 9.3 Analysis of Diffusion Profiles.- 9.4 Diffusion of Hydrogen in Silicon.- 9.5 Diffusion of Hydrogen in Germanium.- 9.6 Diffusion in Gallium Arsenide.- 9.7 Diffusion of Hydrogen in Other Materials.- 9.8 Summary.- 10. Resonance Studies Pertinent to Hydrogen in Semiconductors.- 10.1 Electron Paramagnetic Resonance.- 10.2 Related Muon Studies.- 10.3 Perturbed Angular Correlation.- 11. Prevalence of Hydrogen Incorporation and Device Applications.- 11.1 Experimental Studies of Hydrogen Incorporation.- 11.2 Hydrogen Sensing with MOS Structures.- 11.3 Hydrogen in III-V Semiconductors.- 12. Hydrogen and the Mechanical Properties of Semiconductors.- 12.1 Hydrogen Embrittlement.- 12.2 Hydrogen-Related Defects.- 12.3 m-V Semiconductors.- References.

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