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OverviewHigh-speed Photodiodes in Standard CMOS Technology describes high-speed photodiodes in standard CMOS technology which allow monolithic integration of optical receivers for short-haul communication. For short haul communication the cost aspect is important , and therefore it is desirable that the optical receiver can be integrated in the same CMOS technology as the rest of the system. If this is possible then ultimately a singe-chip system including optical inputs becomes feasible, eliminating EMC and crosstalk problems, while data rate can be extremely high. The problem of photodiodes in standard CMOS technology it that they have very limited bandwidth, allowing data rates up to only 50Mbit per second. High-speed Photodiodes in Standard CMOS Technology first analyzes the photodiode behaviour and compares existing solutions to enhance the speed. After this, the book introduces a new and robust electronic equalizer technique that makes data rates of 3Gb/s possible, without changing the manufacturing technology. The application of this technique can be found in short haul fibre communication, optical printed circuit boards, but also photodiodes for laser disks. Full Product DetailsAuthor: Sasa Radovanovic , Anne-Johan Annema , Bram NautaPublisher: Springer-Verlag New York Inc. Imprint: Springer-Verlag New York Inc. Edition: Softcover reprint of hardcover 1st ed. 2006 Volume: 869 Dimensions: Width: 16.00cm , Height: 0.90cm , Length: 24.00cm Weight: 0.454kg ISBN: 9781441939449ISBN 10: 144193944 Pages: 160 Publication Date: 19 November 2010 Audience: Professional and scholarly , Professional & Vocational Format: Paperback Publisher's Status: Active Availability: Manufactured on demand  We will order this item for you from a manufactured on demand supplier. Table of ContentsIntroduction. Outline. Short range optical interconnection. Why optical interconnection? Characteristics of light. Optical fiber types. High intensity light sources. Photodetectors introduction. High-speed optical receivers in CMOS for [small lambda] = 850 nm-literature overview. CMOS photodiodes for [small lambda] = 850 nm. Introduction. Bandwidth of photodiodes in CMOS. Intrinsic (physical) photodiode bandwidth. Extrinsic (electrical) photodiode bandwidth. Noise in photodiodes. Summary and conclusions. High data-rates with CMOS photodiodes. Introduction. Transimpedance amplifier design. Photodiode selection. Equalizer design. Robustness on spread and temperature. Experimental results. Conclusions. Bulk CMOS photodiodes for [small lambda]= 400 nm. Introduction. Finger nwell/p-substrate diode in adjoined-well technology. Finger n+/nwell/p-substrate diode. Finger n+/p-substrate photodiode in separate-well technology. Finger p+/nwell/p-substrate in adjoined-well technology. p+/nwell photodiode. Conclusion. Polysilicon photodiode. High-speed lateral polydiode. Noise in polysilicon photodiodes. Time domain measurements. Quantum efficiency and sensitivity. Conclusion. CMOS photodiodes: generalized. Introduction. Generalization of CMOS photodiodes. Device layer - photocurrent amplitude. Analog equalization. Summary and Conclusions. Conclusions. Conclusions.ReviewsAuthor InformationTab Content 6Author Website:Countries AvailableAll regions |
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