Overview

Build, simulate, and optimize high-NA EUV imaging from multilayer reticles to silicon with a complete, polarization-aware workflow. From 0.55 NA anamorphic projection and elliptical pupils to reflective reticle multilayers and absorber shadowing, this practical reference connects rigorous electromagnetics and vector imaging to real patterning at the 2 nm and 3 nm nodes. Each chapter has full Python code demos you can run end to end. Model mask 3D effects with RCWA and FMM, propagate diffraction orders through polarization-sensitive pupils, and quantify telecentricity error, Bossung tilt, and best focus shift. Master Debye and Hopkins TCC imaging, partial coherence, and high-NA illumination design with source shapes optimized for contrast, NILS, DOF, and MEEF. Translate aerial images into CDs using calibrated resist models, incorporate stochastic shot noise and secondary electron blur, and build accurate EPE and MEEF budgets tied to yield. Apply polarization-aware OPC and SMO to reduce asymmetry and improve process window. Evaluate k1 tradeoffs and patterning strategies for lines, spaces, cuts, and contacts under anamorphic constraints. Account for field and slit dependence, pellicle effects, flare, and out-of-band light. Close the loop to silicon with robust parameter extraction and validation. The included Python examples cover data pipelines, solver controls, model fitting, and performance metrics at every stage.

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