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OverviewThis monograph is intended for scientists and TCAD engineers who are interested in physics-based simulation of Si and SiGe devices. The common theoretical background of the drift-diffusion, hydrodynamic, and Monte-Carlo models and their synergy are discussed and it is shown how these models form a consistent hierarchy of simulation tools. The basis of this hierarchy is the full-band Monte-Carlo device model which is discussed in detail, including its numerical and stochastic properties. The drift-diffusion and hydrodynamic models for large-signal, small-signal, and noise analysis are derived from the Boltzmann transport equation in such a way that all transport and noise parameters can be obtained by Monte-Carlo simulations. With this hierarchy of simulation tools the device characteristics of strained Si MOSFETs and SiGe HBTs are analysed and the accuracy of the momentum-based models is assessed by comparison with the Monte-Carlo device simulator. Full Product DetailsAuthor: Christoph Jungemann , Bernd MeinerzhagenPublisher: Springer Verlag GmbH Imprint: Springer Verlag GmbH Edition: 2003 ed. Dimensions: Width: 15.50cm , Height: 1.70cm , Length: 23.50cm Weight: 1.270kg ISBN: 9783211013618ISBN 10: 321101361 Pages: 261 Publication Date: 05 June 2003 Audience: General/trade , General Format: Hardback Publisher's Status: Active Availability: In Print This item will be ordered in for you from one of our suppliers. Upon receipt, we will promptly dispatch it out to you. For in store availability, please contact us. Table of Contents1 Introduction.- References.- 2 Semiclassical Transport Theory.- 2.1 The Boltzmann Transport Equation.- 2.2 Balance Equations.- 2.3 The Microscopic Relaxation Time.- 2.4 Fluctuations in the Steady-State 25 References.- 3 The Monte-Carlo Method.- 3.1 Basic Monte-Carlo Methods.- 3.2 The Monte-Carlo Solver of the Boltzmann Equation.- 3.3 Velocity Autocorrelation Function.- 3.4 Basic Statistics.- 3.5 Convergence Estimation.- References.- 4 Scattering Mechanisms.- 4.1 Phonon Scattering.- 4.2 Alloy Scattering.- 4.3 Impurity Scattering.- 4.4 Impact Ionization by Electrons.- 4.5 Surface Roughness Scattering.- References.- 5 Full-Band Structure.- 5.1 Basic Properties of the Band Structure of Relaxed Silicon.- 5.2 Basic Properties of the Band Structure of Strained SiGe.- 5.3 k-Space Grid.- 5.4 Calculation of the Density of States.- 5.5 Mass Tensor Evaluation.- 5.6 Particle Motion in Phase-Space.- 5.7 Selection of a Final State in k-Space.- References.- 6 Device Simulation.- 6.1 Device Discretization.- 6.2 Band Edges.- 6.3 Poisson Equation.- 6.4 Self-Consistent Device Simulation.- 6.5 Nonlinear Poisson Equation.- 6.6 Nonself-Consistent Device Simulation.- 6.7 Statistical Enhancement.- 6.8 Terminal Current Estimation.- 6.9 Contact Resistance.- 6.10 Normalization of Physical Quantities.- References.- 7 Momentum-Based Transport Models.- 7.1 The Hydrodynamic Model.- 7.2 Small-Signal Analysis.- 7.3 Noise Analysis.- 7.4 The Drift-Diffusion Model.- 7.5 Transport and Noise Parameter Simulation.- References.- 8 Stochastic Properties of Monte-Carlo Device Simulations.- 8.1 Stochastic Error.- 8.2 In-Advance CPU Time Estimation.- References.- 9 Results.- 9.1 N+NN+ and P+PP+ Structures.- 9.2 MOSFETs.- 9.3 SiGe HBTs.- References.ReviewsAuthor InformationTab Content 6Author Website:Countries AvailableAll regions |