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OverviewIn the past ten years, heteroepitaxy has continued to increase in importance with the explosive growth of the electronics industry and the development of a myriad of heteroepitaxial devices for solid state lighting, green energy, displays, communications, and digital computing. Our ever-growing understanding of the basic physics and chemistry underlying heteroepitaxy, especially lattice relaxation and dislocation dynamic, has enabled an ever-increasing emphasis on metamorphic devices. To reflect this focus, two all-new chapters have been included in this new edition. One chapter addresses metamorphic buffer layers, and the other covers metamorphic devices. The remaining seven chapters have been revised extensively with new material on crystal symmetry and relationships, III-nitride materials, lattice relaxation physics and models, in-situ characterization, and reciprocal space maps. Full Product DetailsAuthor: John E. Ayers (University of Connecticut, Storrs, USA) , Tedi Kujofsa (University of Connecticut, Storrs, USA) , Paul Rago (University of Connecticut, Storrs, USA) , Johanna Raphael (University of Connecticut, Storrs, USA)Publisher: Taylor & Francis Ltd Imprint: CRC Press Edition: 2nd edition Weight: 0.453kg ISBN: 9780367655808ISBN 10: 0367655802 Pages: 643 Publication Date: 30 September 2020 Audience: College/higher education , General/trade , Tertiary & Higher Education , General Format: Paperback Publisher's Status: Active Availability: In Print  This item will be ordered in for you from one of our suppliers. Upon receipt, we will promptly dispatch it out to you. For in store availability, please contact us. Table of ContentsIntroduction. Properties of Semiconductors. Heteroepitaxial Growth. Surface and Chemical Considerations in Heteroepitaxy. Mismatched Heteroepitaxial Growth and Strain Relaxation: I. Uniform Layers. Mismatched Heteroepitaxial Growth and Strain Relaxation: II. Graded Layers and Multilayered Structures. Characterization of Heteroepitaxial Layers. Defect Engineering in Heteroepitaxial Material. Metamorphic Devices.ReviewsConcise, didactic and has wide coverage. The book covers the most important aspects of the heteroepitaxy of semiconductors from basics to applications, including characterization techniques. The book is not only an excellent introduction to the diverse field of semiconductor heteroepitaxy, but provides solid background for further, more specialized studies. - Ferenc Riesz, Centre for Energy Research, Hungarian Academy of Sciences, Hungary Author InformationJ.E. Ayers, T. Kujofsa, P.B. Rago, and J.E. Raphael are all members of the Semiconductor Materials Research Group at the University of Connecticut, Storrs, USA. Tab Content 6Author Website:Countries AvailableAll regions |
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