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Author:   Alain C. Diebold
Publisher:   Taylor & Francis Inc
Imprint:   CRC Press Inc
Dimensions:   Width: 17.80cm , Height: 4.60cm , Length: 25.40cm
Weight:   1.580kg
ISBN:  

9780824705060

ISBN 10:   0824705068
Pages:   894
Publication Date:   29 June 2001
Audience:   Professional and scholarly ,  Professional and scholarly ,  Professional & Vocational ,  Postgraduate, Research & Scholarly
Format:   Hardback
Publisher's Status:   Active
Availability:   In Print  
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Table of Contents

Introduction - silicon semiconductor metrology. Part 1 Transistor fabrication metrology: gate dielectric metrology; metrology for ion implantation; MOS device characterization; carrier illumination characterization of ultra-shallow implants;modelling of statistical manufacturing sensitivity and of process control and metrology requirements for a 0.18Mum NMOSFET. Part 2 On-chip interconnect metrology: overview of metrology for on-chip interconnect; metrology for on-chip interconnectdielectrics; thin film metrology using impulsive stimulated thermal scattering (ISTS); metal interconnect process control using picosecond ultrasonics; sheet resistance measurements of interconnect films; characterization of low dielectric constantmaterials; high resolution profilometry for CMP and etch metrology. Part 3 Lithography metrology: critical dimension metrology in the scanning electron microscope; scanned probe microscope dimensional metrology; electrical DC metrology and relatedreference materials; metrology of image placement; scatterometry for semiconductor metrology. Part 4 Defect detection and characterization: unpatterned wafer defect detection; particle and defect characterization; calibration of particle detectionsystems. Part 5 Sensor based metrology: in-situ metrology. Part 6 Data management: metrology data management and information systems. Part 7 Electrical measurement based statistical metrology: statistical metrology. Part 8 Overviews of key measurement andcalibration technology: physics of optical metrology of silicon based semiconductor devices; UV, VUV and extreme UV spectroscopic reflectometry and ellipsometry; analysis of thin layer structures by x-ray reflectometry; ion beam methods; electronmicroscopy based measurement of feature thickness and calibration of reference materials; status of lithography at the end of 2000.

Reviews

recommended for special libraries and academic libraries serving graduate level programs in these areas. - E-Streams a cornerstone reference source.uniquely ample and thorough. -Semiconductor International a formative instrument. contains valuable and very new information.an instructive and valuable book. -IASI Polytechnic Magazine Promo Copy

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Alain C. Diebold

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