Overview

This volume, as the previous ones, consists primarily of review artic1es. However, it also contains a large quantity of original material on the growth of crystals and films. Priority is given to experimental work. Only two artic1es are concerned exc1usively with the theory of crystal growth. Theoretical aspects are treated in several others. This volume is divided into three parts. Part I, Epitaxy and Transformations in Thin Films, stems from the current broad application of lasers and optical effects in general to crystal growth (in particular, the growth of thin films). The first three artic1es of the book are devoted to this topic. In particular, the laser pulse vaporization method, for which a comparatively slow deposition rate is typical (which should not always be viewed as a drawback), is distinguished by the unique kinetics of the initial growth stages. These are not entirely explained. However, this method is completely suitable for oriented or generally ordered growth of films under otherwise equal conditions. Another artic1e of this section is based on use of ultrashort (down to picosecond) laser pulses. It emphasizes the nonequilibrium processes of crystallization and decrystallization that are characteristic for such influences. In particular, material heated above its melting point and metastable states in the semiconductor melt exhibit these qualities.

Full Product Details

Author:   E.I. Givargizov ,  Dennis W. Wester ,  S.A. Grinberg
Publisher:   Springer-Verlag New York Inc.
Imprint:   Springer-Verlag New York Inc.
Edition:   Softcover reprint of the original 1st ed. 1991
Volume:   17
ISBN:  

9781461366294

ISBN 10:   1461366291
Pages:   216
Publication Date:   14 April 1992
Audience:   Professional and scholarly ,  Professional & Vocational
Format:   Paperback
Publisher's Status:   Active
Availability:   In Print  
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Table of Contents

1. Epitaxy and Transformations in Thin Films.- Structural and Phase Transformations in Films Deposited Using Laser Plasma.- Melting and Crystallization of Semiconductors Using Pulsed Lasers.- Photostimulated Epitaxy.- Growth of Polycrystalline Germanium Films on Insulating Substrates.- Structural Changes and Mass Transfer in Elastically Strained Films.- Solid-State Transformations Induced by Boundary Migrations.- Explosive Crystallization of Amorphous Substances with Fixed Crystallites.- Growth of Crystals in Films with an Amorphous Component during Solid-State Reactions.- Decomposition of a Solid Solution on the Surface of Lithium Niobate Crystals: Structure, Morphology, and Mutual Orientation of Phases.- II. Growth of Crystals from Solution.- Growth and Dissolution as Studied by Liquid Inclusion Migration.- Structural Analogs of ?-Quartz - Aluminum and Gallium Orthophosphates.- Growth Rate Problems of KDP Type Single Crystals.- Growth of Single Crystals of Rare Earth Phosphates.- III. Growth of Crystals from the Melt.- Imputity Diffusion in a Crystal Growing Near the Stepped Interfacial Surface.- Lateral Impurity Segregation in Crystals Grown from the Melt.- Cellular Substructures in Single Crystalline Solid Solutions of Inorganic Fluorides Having the Fluorite Structure.- Faceting of Silicide and Germanide Crystals Grown from the Melt.- Gas Inclusions during Crystallization from the Melt.- Dislocation Structures in Metallic Single Crystals Grown from the Melt.- In Memory of N. N. Sheftal'.

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