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OverviewWritten by experts in each field, both in academia and industry, this highly illustrated book clarifies the physics of nitride-based materials and related devices. Full Product DetailsAuthor: Bernard Gil (Directeur de Recherche, Centre National de la Recherche Scientifique, Groupe d'Etude des Semiconducteurs, Universite de Montpellier II)Publisher: Oxford University Press Imprint: Clarendon Press Volume: 6 Dimensions: Width: 16.30cm , Height: 3.10cm , Length: 24.20cm Weight: 0.963kg ISBN: 9780198501596ISBN 10: 0198501595 Pages: 492 Publication Date: 01 April 1998 Audience: Professional and scholarly , Professional & Vocational Format: Hardback Publisher's Status: Active Availability: Manufactured on demand  We will order this item for you from a manufactured on demand supplier. Table of Contents1. Beyond silicon: the rise of compound semiconductors ; 2. Deposition and properties of III-nitrides by molecular beam epitaxy ; 3. MOVPE growth of nitrides ; 4. Structural defects and materials performance of the III-V nitrides ; 5. Modulation spectroscopy of the group III nitrides ; 6. Optical properties and lasing in GaN ; 7. Defect spectroscopy in the nitrides ; 8. Electronic and optical properties of GaN based quantum wells ; 9. Transistors and detectors based on GaN related materials ; 10. III-V nitride based short-wavelength LEDs and LDs ; 11. Cubic group III nitridesReviews...the book succeeds well in its aim of providing an informed survey of the rapidly developing topic of the nitride semiconductors, at an expository level suited both to those entering the field from other semiconductor areas and to those already in the field. * John W. Allen, High Temperatures-High Pressures, 1998 * ...the book succeeds well in its aim of providing an informed survey of the rapidly developing topic of the nitride semiconductors, at an expository level suited both to those entering the field from other semiconductor areas and to those already in the field. John W. Allen, High Temperatures-High Pressures, 1998 Author InformationBernard Gil, Directeur de Recherche au CNRS, Centre National de la Recherche Scientifique, Groupe d'Etude des Semiconducteurs, Universite de Montpellier II, Case courrier 074, F-34095 Montpellier Cedex 5, France, Tel:+33 67 14 39 24, Fax:+33 67 14 37 60, email: gil@ges.univ-montp2.fr (address details of contributors attached) Tab Content 6Author Website:Countries AvailableAll regions |
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