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OverviewFundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment focuses on silicon devices and includes the unique attributes and design requirements for emerging silicon carbide devices. Full Product DetailsAuthor: B. Jayant BaligaPublisher: Springer-Verlag New York Inc. Imprint: Springer-Verlag New York Inc. Edition: Softcover reprint of the original 1st ed. 2008 Dimensions: Width: 15.50cm , Height: 5.50cm , Length: 23.50cm Weight: 1.623kg ISBN: 9781489977656ISBN 10: 1489977651 Pages: 1069 Publication Date: 23 August 2016 Audience: Professional and scholarly , Professional & Vocational Format: Paperback Publisher's Status: Active Availability: Manufactured on demand  We will order this item for you from a manufactured on demand supplier. Table of ContentsMaterial Properties and Transport Physics.- Breakdown Voltage.- Schottky Rectifiers.- P-i-N Rectifiers.- Power MOSFETs.- Bipolar Junction Transistors.- Thyristors.- Thyristors.- Synopsis.ReviewsAuthor InformationTab Content 6Author Website:Countries AvailableAll regions |
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