Festkörperprobleme

Author:   U. Rossler
Publisher:   Springer-Verlag Berlin and Heidelberg GmbH & Co. KG
Edition:   1989 ed.
Volume:   29
ISBN:  

9783662160688


Pages:   345
Publication Date:   18 April 2014
Format:   Paperback
Availability:   In stock   Availability explained
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Festkörperprobleme


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Full Product Details

Author:   U. Rossler
Publisher:   Springer-Verlag Berlin and Heidelberg GmbH & Co. KG
Imprint:   Springer-Verlag Berlin and Heidelberg GmbH & Co. K
Edition:   1989 ed.
Volume:   29
Dimensions:   Width: 17.00cm , Height: 1.90cm , Length: 24.40cm
Weight:   0.615kg
ISBN:  

9783662160688


ISBN 10:   3662160684
Pages:   345
Publication Date:   18 April 2014
Audience:   Professional and scholarly ,  Professional & Vocational
Format:   Paperback
Publisher's Status:   Active
Availability:   In stock   Availability explained
We have confirmation that this item is in stock with the supplier. It will be ordered in for you and dispatched immediately.
Language:   German

Table of Contents

Charge transfer between weakly coupled normal metals and superconductors at low temperatures.- Quantum effects and the onset of superconductivity in granular films.- Pattern formation in a liquid crystal.- X-ray absorption and reflection in materials sciences.- Propagation of large-wavevector acoustic phonons new perspectives from phonon imaging.- Theory of dynamical surface states and reconstructions at crystal surfaces.- Scanning tunneling microscopy and spectroscopy on clean and metal-covered Si surfaces.- Optical dephasing and orientational relaxation of wannier-excitons and free carriers in GaAs and GaAs/AlxGa1?xAs quantum wells.- The spectroscopic evidence for the identity of EL2 and the AsGa antisite in As-grown GaAs.- On the charge state of the EL2 mid gap level semi-insulating GaAs from a quantitative analysis of the compensation.- Deep donor levels (DX centers) in III–V semiconductors: Recent experimental results.- Chemical binding, stability and metastability of defects in semiconductors.- A new look at the reliability of thin film metallizations for microelectronic devices.- Quantum dot resonant tunneling spectroscopy.- DC and far infrared experiments on deep mesa etched single and multi-layered quantum wires.- Coherent electron focusing.- The size-induced metal-insulator transition and related electron interference phenomena in modern microelectronics.

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