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OverviewThis is the first book dedicated exclusively to epitaxial graphene on silicon carbide (EG-SiC). It comprehensively addresses all fundamental aspects relevant for the study and technology development of EG materials and their applications, using quantum Hall effect studies and probe techniques such as scanning tunneling microscopy and atomic resolution imaging based on transmission electron microscopy. It presents the state of the art of the synthesis of EG-SiC and profusely explains it as a function of SiC substrate characteristics such as polytype, polarity, and wafer cut as well as the in situ and ex situ conditioning techniques, including H2 pre-deposition annealing and chemical mechanical polishing. It also describes growth studies, including the most popular characterization techniques, such as ultrahigh-vacuum, partial-pressure, or graphite-cap sublimation techniques, for high-quality controlled deposition. The book includes relevant examples on synthesis and characterization techniques as well as device fabrication processing and performance and complements them with theoretical modeling and simulation studies, which are helpful in the fundamental comprehension of EG-SiC substrates and their potential use in electronic applications. It addresses the fundamental aspects of EG-SiC using quantum Hall effect studies as well as probe techniques, such as scanning tunneling microscopy or atomic resolution imaging based on transmission electron microscopy. It comprises chapters that present reviews and vision on the current state of the art of experts in physics, electronic engineering, materials science, and nanotechnology from Europe and Asia. Full Product DetailsAuthor: Gemma Rius (Institute of Microelectronics of Barcelona-National Center of Microelectronics (IMB-CNM), Spanish National Research Council (CSIC), Spain) , Philippe Godignon (Institute of Microelectronics of Barcelona-National Center of Microelectronics (IMB-CNM), Spanish National Research Council (CSIC), Spain)Publisher: Pan Stanford Publishing Pte Ltd Imprint: Pan Stanford Publishing Pte Ltd Weight: 0.564kg ISBN: 9789814774208ISBN 10: 9814774200 Pages: 260 Publication Date: 31 January 2018 Audience: College/higher education , Professional and scholarly , Tertiary & Higher Education , Professional & Vocational Format: Hardback Publisher's Status: Active Availability: In Print  This item will be ordered in for you from one of our suppliers. Upon receipt, we will promptly dispatch it out to you. For in store availability, please contact us. Table of Contents1. Epitaxial Graphene on SiC Substrate: A View from a Specialist of SiC Growth and Material Science. 2. Growth Mechanism, Structures, and Properties of Graphene on SiC(0001) Surfaces: Theoretical and Experimental Studies at the Atomic Scale. 3. Fabrication of Graphene by Thermal Decomposition of SiC. 4. Nanoscale Electrical and Structural Properties of Epitaxial Graphene Interface with SiC(0001). 5. Theory of Graphene Growth on SiC Substrate. 6. Epitaxial Graphene on SiC from the Viewpoint of Planar Technology. 7. The Beauty of Quantum Transport in Graphene. Appendix A. Raman Spectroscopy of Graphene on Silicon Carbide. Appendix B. Graphene on SiC: Chemico-Physical Characterization by XPS.ReviewsAuthor InformationGemma Rius is a Beatriu de Pinós postdoctoral fellow at the Institute of Microelectronics of Barcelona-National Center of Microelectronics (IMB-CNM) of the Spanish National Research Council (Superior Council for Scientific Research, CSIC) since 2015. She graduated in physics from the Autonomous University of Barcelona, Spain. From 2002 to 2008, she was a nanolithography engineer and PhD student at IMB-CNM, CSIC. She ws a postdoctoral researcher at Tohoku University and Toyota Technological Institute in Japan. She then joined Nagoya Institute of Technology, Japan, as assistant professor. She has been mainly working on nanostructuring of 2D materials and has been involved in carbon nanomaterials, such as graphene, for more than 12 years. Philippe Godignon is a professor of electronic engineering, aerospace engineering, and physical chemistry at IMB-CNM. He received his PhD in electrical engineering in 1993 from the National Institute of Applied Sciences in Lyon, France. Since 1990, he has been working with the Power Devices and Systems group of IMB-CNM on Si and SiC semiconductor device design and technologies. More recently, he has also been working on the synthesis and processing of carbon-based materials (carbon nanotubes, graphene, and polymers) for nanotechnologies and biosensors. He is co-author of more than 235 publications in international journals and numerous presentation for conferences and holds 16 patents. He also participated in the creation of two companies, Graphene Nanotech S. L., Spain, and CALY Technologies, France. Tab Content 6Author Website:Countries AvailableAll regions |
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