Electron Spin Resonance in Semiconductors

Author:   Gordon Lancaster
Publisher:   Springer-Verlag New York Inc.
Edition:   Softcover reprint of the original 1st ed. 1966
ISBN:  

9781468417395


Pages:   152
Publication Date:   26 May 2012
Format:   Paperback
Availability:   Manufactured on demand   Availability explained
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Electron Spin Resonance in Semiconductors


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Overview

Since the study of the solid state began it has been necessary to use increasingly refined experimental techniques, of which electron spin resonance is an important example, in the effort to gain information concerning the structure and properties of an immense and varied range of solids. In the last two decades the great commercial demand for solid-state electronic devices has stimulated research into the funda­ mental properties of semiconductors. At the same time as semiconductor devices were becoming techno­ logically important, the technique of electron spin resonance was first being used on a large scale, principally at the Clarendon Laboratory, Oxford. Both solid-state physics and electron spin resonance have now reached the stage where they are useful to each other, primarily in the realm of the atomic properties of matter. Dr Lancaster's book is one of a series of monographs that aims at covering as comprehensively as possible the field of electron spin resonance. His book has been written for those who wish to know some­ thing about the way in which the electron spin resonance technique has been used in the study of semiconductors. It also has value for specialists who may need an authoritative work of reference, and for workers in allied subjects who wish to use this technique to further their work. Much of his treatise deals with electron spin resonance in crystals of silicon and germanium containing specific impurities, as these materials are of greatest interest. Practical results are discussed wherever possible.

Full Product Details

Author:   Gordon Lancaster
Publisher:   Springer-Verlag New York Inc.
Imprint:   Springer-Verlag New York Inc.
Edition:   Softcover reprint of the original 1st ed. 1966
Dimensions:   Width: 14.00cm , Height: 0.80cm , Length: 21.60cm
Weight:   0.216kg
ISBN:  

9781468417395


ISBN 10:   1468417398
Pages:   152
Publication Date:   26 May 2012
Audience:   Professional and scholarly ,  Professional & Vocational
Format:   Paperback
Publisher's Status:   Active
Availability:   Manufactured on demand   Availability explained
We will order this item for you from a manufactured on demand supplier.

Table of Contents

1 Energy bands and impurity states in semiconductors.- 2 Group V impurities in silicon.- 3 Deep-lying states in silicon.- 4 Radiation-damaged semiconductors.- 5 Electron spin resonance in germanium and Group III–V compounds.- 6 Application of electron spin resonance in semiconductors.- Appendix: Wannier functions and shallow donor-impurity states.

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