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OverviewThis work provides a comprehensive discussion of the bias dependence of equivalent circuit parameters for the three devices and an extensive discussion of temperature dependence. It: covers recess-etched MESFETs and self-aligned MESFETs with and without lightly-doped-drains and JFETs; analyzes GaAs-based pHEMTS and InP lattice-matched HEMT equivalent circuits; and describes a large-signal, temperature-dependent model extractor for A1GaAs-GaAs HBTs. The book is intended for circuit designers, process and device developers and test engineers. Full Product DetailsAuthor: Robert AnholtPublisher: Artech House Publishers Imprint: Artech House Publishers Dimensions: Width: 15.20cm , Height: 2.20cm , Length: 22.90cm Weight: 0.646kg ISBN: 9780890067499ISBN 10: 089006749 Pages: 324 Publication Date: 30 November 1994 Audience: College/higher education , Professional and scholarly , Postgraduate, Research & Scholarly , Professional & Vocational Format: Hardback Publisher's Status: Active Availability: In Print  This item will be ordered in for you from one of our suppliers. Upon receipt, we will promptly dispatch it out to you. For in store availability, please contact us. Table of ContentsPhysical Modeling of III-V Semiconductor Devices. How to Measure Temperature-dependent Equivalent Circuits. Self-heating in Transistors. GaAs MESFET Equivalent Circuits (Room Temperature). Temperature-dependent MESFET Equivalent Circuits. HEMT Equivalent Circuits (Room Temperature). Temperature-dependent HEMT Equivalent Circuits. Gate Currents in MESFETs and HEMTs. Heterojunction Bipolar Transistors. Circuit Modeling.ReviewsAuthor InformationTab Content 6Author Website:Countries AvailableAll regions |
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