Free Delivery Over $100
|
|
|||
|
||||
OverviewDefects in ion-implanted semiconductors are important and will likely gain increased importance as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer after high temperature annealing. The editors of this volume and Volume 45 focus on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented. Full Product DetailsAuthor: R. K. Willardson (WILLARDSON CONSULTING SPOKANE, WASHINGTON) , Eicke R. Weber (Fraunhofer-Institut für Solare Energiesysteme ISE, Freiburg, Germany) , Constantinos Christofides (University of Cyprus) , Gerard Ghibaudo (Labaratoire de Physique des Composants a Semiconducteur)Publisher: Elsevier Science Publishing Co Inc Imprint: Academic Press Inc Volume: v. 46 Dimensions: Width: 15.20cm , Height: 2.20cm , Length: 22.90cm Weight: 0.620kg ISBN: 9780127521466ISBN 10: 0127521461 Pages: 316 Publication Date: 12 June 1997 Audience: Professional and scholarly , Professional & Vocational Format: Hardback Publisher's Status: Out of Print Availability: In Print  Limited stock is available. It will be ordered for you and shipped pending supplier's limited stock. Table of ContentsReviewsAuthor InformationProf. Dr. Eicke R. Weber, Fraunhofer-Institut fur Solare Energiesysteme ISE, Freiburg, Germany Tab Content 6Author Website:Countries AvailableAll regions |
||||
