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OverviewA major current challenge for semiconductor devices is to develop materials for the next generation of optical communication systems and solar power conversion applications. Recently, extensive research has revealed that an introduction of only a few percentages of nitrogen into III-V semiconductor lattice leads to a dramatic reduction of the band gap. This discovery has opened the possibility of using these material systems for applications ranging from lasers to solar cells. 'Physics and Technology of Dilute III-V Nitride Semiconductors and Novel Dilute Nitride Material Systems' reviews the current status of research and development in dilute III-V nitrides, with 24 chapters from prominent research groups covering recent progress in growth techniques, experimental characterization of band structure, defects carrier transport, transport properties, dynamic behavior of N atoms, device applications, modeling of device design, novel optoelectronic integrated circuits, and novel nitrogen containing III-V materials. Full Product DetailsAuthor: Ayse Erol , Ayse ErolPublisher: Springer Imprint: Springer ISBN: 9781281179463ISBN 10: 1281179469 Pages: 590 Publication Date: 01 January 2008 Audience: General/trade , General Format: Undefined Publisher's Status: Active Availability: In stock We have confirmation that this item is in stock with the supplier. It will be ordered in for you and dispatched immediately. Table of ContentsReviewsAuthor InformationTab Content 6Author Website:Countries AvailableAll regions |