Overview

This text consists of a comprehensive and critical compilation of data for the following materials and properties: diffusion in silicon, germanium and their alloys; diffusion in compound semiconductors; diffusion in silicides; chemical diffusion in bulk inhomogeneous semiconductors; grain-boundary and dislocation diffusion in semiconductors and silicides; and surface diffusion on semiconductors. Although most of the silicides are not semiconducting, this chapter is included because a number of them have become integrated in the Si technology and because they have not been treated in previous volumes.

Full Product Details

Author:   C.E. Allen ,  D.L. Beke ,  H. Bracht ,  C.M. Bruff
Publisher:   Springer-Verlag Berlin and Heidelberg GmbH & Co. KG
Imprint:   Springer-Verlag Berlin and Heidelberg GmbH & Co. K
Edition:   1998 ed.
Volume:   33A
Dimensions:   Width: 19.30cm , Height: 2.50cm , Length: 27.00cm
Weight:   1.540kg
ISBN:  

9783540609643

ISBN 10:   3540609644
Pages:   476
Publication Date:   18 March 1998
Audience:   College/higher education ,  Professional and scholarly ,  Postgraduate, Research & Scholarly ,  Professional & Vocational
Format:   Mixed media product
Publisher's Status:   Active
Availability:   Out of stock  
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Table of Contents

From the Contents: Atomic Fluxes.- Equations for diffusion.- Atomic mechanisms of diffusion.- Methods of measuring diffusion coefficients.- Temperature, pressure and mass dependence of diffusion.- Diffusion in elementary semiconductors.- Diffusion in compound semiconductors.- Diffusion in silicides.- Chemical diffusion.- Grain-boundary and dislocation diffusion.- Surface diffusion

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