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Author:   H Sakaki (The University of Tokyo, Japan) ,  J.C. Woo (Seoul National University, South Korea) ,  N Yokoyama (Fujitsu Laboratories, Japan) ,  Y Harayama (NTT Basic Research Laboratory, Japan)
Publisher:   Taylor & Francis Ltd
Imprint:   Institute of Physics Publishing
Volume:   162
Dimensions:   Width: 15.60cm , Height: 4.60cm , Length: 23.20cm
Weight:   1.496kg
ISBN:  

9780750306119

ISBN 10:   0750306114
Pages:   892
Publication Date:   01 January 1999
Audience:   College/higher education ,  Professional and scholarly ,  Undergraduate ,  Postgraduate, Research & Scholarly
Format:   Hardback
Publisher's Status:   Active
Availability:   In Print  
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Table of Contents

Review papers (3 papers). Optoelectronic devices and OEICs (10 papers). Long-wavelength and intersubband transition (7 papers). Optical properties (7 papers). Field-effect transistors: FETs and HEMTs (16 papers). Hetero-bipolar transistors: HBTs (6 papers). Semiconductor device physics (12 papers). Quantum wires (6 papers). Quantum dots (13 papers). Material growth (12 papers). Material characterization (12 papers). Material growth and characterization: wide gap and nitride (17 papers). Doping and processing (13 papers). Late news (11 papers). Author and subject index.

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H. Sakaki, J. C. Woo, N. Yokoyama and Y. Harayama

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