Free Delivery Over $100
|
|
|||
|
||||
OverviewMost of the recent texts on compact modeling are limited to a particular class of semiconductor devices and do not provide comprehensive coverage of the field. Having a single comprehensive reference for the compact models of most commonly used semiconductor devices (both active and passive) represents a significant advantage for the reader. Indeed, several kinds of semiconductor devices are routinely encountered in a single IC design or in a single modeling support group. Compact Modeling includes mostly the material that after several years of IC design applications has been found both theoretically sound and practically significant. Assigning the individual chapters to the groups responsible for the definitive work on the subject assures the highest possible degree of expertise on each of the covered models. Full Product DetailsAuthor: Gennady GildenblatPublisher: Springer Imprint: Springer Edition: 2010 ed. Dimensions: Width: 15.50cm , Height: 2.80cm , Length: 23.50cm Weight: 0.831kg ISBN: 9789400793248ISBN 10: 9400793243 Pages: 527 Publication Date: 30 September 2014 Audience: Professional and scholarly , Professional & Vocational Format: Paperback Publisher's Status: Active Availability: Manufactured on demand  We will order this item for you from a manufactured on demand supplier. Table of ContentsCompact Models of MOS Transistors.- Surface-Potential-Based Compact Model of Bulk MOSFET.- PSP-SOI: A Surface-Potential-Based Compact Model of SOI MOSFETs.- Benchmark Tests for MOSFET Compact Models.- High-Voltage MOSFET Modeling.- Physics of Noise Performance of Nanoscale Bulk MOS Transistors.- Compact Models of Bipolar Junction Transistors.- to Bipolar Transistor Modeling.- Mextram.- The HiCuM Bipolar Transistor Model.- Compact Models of Passive Devices.- Integrated Resistor Modeling.- The JUNCAP2 Model for Junction Diodes.- Surface-Potential-Based MOS Varactor Model.- Modeling of On-chip RF Passive Components.- Modeling of Multiple Gate MOSFETs.- Multi-Gate MOSFET Compact Model BSIM-MG.- Compact Modeling of Double-Gate and Nanowire MOSFETs.- Statistical Modeling.- Modeling of MOS Matching.- Statistical Modeling Using Backward Propagation of Variance (BPV).ReviewsFrom the reviews: This excellent reference covers a niche in the recent development of compact modeling for integrated circuit systems. The book can serve as a guide to current research based on the down-scaling of semiconductor devices, particularly for device physicists, electrical engineers and applied mathematicians. The reader will benefit in particular from the coverage of statistical modeling, which treats stochastic system variability and other random effects ... . Each chapter is well documented with references, and the underlying theory for each device class is well demonstrated. (Axel Mainzer Koenig, Optics & Photonics News, May, 2011) From the reviews: This excellent reference covers a niche in the recent development of compact modeling for integrated circuit systems. The book can serve as a guide to current research based on the down-scaling of semiconductor devices, particularly for device physicists, electrical engineers and applied mathematicians. The reader will benefit in particular from the coverage of statistical modeling, which treats stochastic system variability and other random effects ... . Each chapter is well documented with references, and the underlying theory for each device class is well demonstrated. (Axel Mainzer Koenig, Optics & Photonics News, May, 2011) From the reviews: This excellent reference covers a niche in the recent development of compact modeling for integrated circuit systems. The book can serve as a guide to current research based on the down-scaling of semiconductor devices, particularly for device physicists, electrical engineers and applied mathematicians. The reader will benefit in particular from the coverage of statistical modeling, which treats stochastic system variability and other random effects . Each chapter is well documented with references, and the underlying theory for each device class is well demonstrated. (Axel Mainzer Koenig, Optics & Photonics News, May, 2011) Author InformationTab Content 6Author Website:Countries AvailableAll regions |
||||
